摘要
NO_(2)是一种有毒气体,能与空气中的其他有机化合物发生反应,造成空气污染并对人体有很大的危害.因此,需要一种气体传感器来检测NO_(2).然而,传统的NO_(2)传感器很难在室温(25℃)下工作.本研究报告了SnS_(2)/In_(2)O_(3)的室温(25℃) NO_(2)气体传感,采用热注入法和水热法制备了In_(2)O_(3)量子点和SnS_(2)纳米片.凭借SnS_(2)独特的二维结构,在其上装饰In_(2)O_(3),复合增强了其传感性能,产品采用X射线衍射(XRD)、扫描电子显微镜(SEM)、高分辨率透射电子显微镜(HR-TEM)和X射线光电子能谱仪(XPS)进行表征.结果表明,SnS_(2)/In_(2)O_(3)传感器对体积分数为1×10^(-6) NO_(2)的响应为26.6,响应和恢复时间分别为146 s和243 s.由于异质结结构增加了活性位点的数量,加速了气体的传输,促进了电荷转移和气体解吸,提高了NO_(2)气体传感性能.这种优异的传感性能在NO_(2)检测中具有广阔的应用前景.
NO_(2) is a toxic gas that can react with other organic compounds in the air,causing air pollution and posing a significant harm to human health.Therefore,a gas sensor that can detect NO_(2) is needed.However,conventional NO_(2) gas sensors are difficult to operate at room temperature(25℃).In this work,NO_(2) gas sensing based on SnS_(2)/In_(2)O_(3),which can operate at room temperature(25℃),is reported.In_(2)O_(3) quantum dots and SnS_(2) nanosheets are prepared by the hot-injection method and hydrothermal method.By using the unique two-dimensional structure of SnS_(2),In_(2)O_(3) is decorated on it,and the composite enhances its sensing performance.The products are characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM),high-resolution transmission electron microscopy(HR-TEM),and X-ray photoelectron spectroscopy(XPS).The results demonstrate that the composites prepared by 52%In_(2)O_(3) exhibit the best sensing response.The fabricated sensor shows a response range from 26.6 to NO_(2) of 1×10^(-6) in volume fraction,fast response and short recovery time at room temperature(25℃).Moreover,this sensor demonstrates excellent reproducibility and selectivity.The heterojunction structure increases the number of active sites and accelerates the gas transport,which promotes charge transfer and gas desorption to improve NO_(2) gas sensing performance.This excellent sensing performance has a great application prospect in NO_(2) detection.
作者
陈进龙
陶然
李冲
张健磊
付琛
罗景庭
Chen Jin-Long;Tao Ran;Li Chong Zhang;Jian-Lei;Fu Chen;Luo Jing-Ting(Shenzhen Key Laboratory of Advanced Thin Films and Applications,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China)
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2024年第10期287-293,共7页
Acta Physica Sinica
基金
国家自然科学基金(批准号:12104320)
国家重点研发计划(批准号:2021YFF0603704)
广东省基础与应用领域研究项目(批准号:2020A1515110561,2019A1515111199)
广东省研发项目(批准号:2020B0101040002)
广东省教育厅重点研究项目(批准号:2020ZDZX2007)
深圳市科技项目(批准号:RCBS20200714114918249,GJHZ20200731095803010,JCYJ20220818095611025,JSGG20201103090801005)
深圳大学创业研究基金(批准号:QNJS0352)资助的课题。
