摘要
荧光转换型近红外发光二极管(NIR pc-LED)具有体积小、谱带宽、峰位易调谐等优点,是新一代NIR光源发展的前沿,其关键在于研发可被蓝光有效激发的高效率宽带近红外荧光粉。LiScSi_(2)O_(6)∶Cr^(3+)荧光材料的激发波长为460 nm,发射峰位在845 nm,光谱带宽为156 nm,内量子效率为64.4%。基于该体系,本文通过M离子(M=Ga^(3+),Lu^(3+),Y^(3+),Gd^(3+))取代Sc^(3+)的方式对其性能进行调控。结果表明,引入M离子易生成杂相或发生相变,降低了材料的发光性能。本文从晶体结构出发对其调控过程进行了分析。
Near-infrared phosphor-converted light-emitting diodes(NIR pc-LEDs)are expected to be the next-gen⁃eration NIR light sources,which have the advantages of small size,broad bandwidth,and easy tuning of emission peaks.The key for NIR pc-LEDs is to develop highly efficient broadband NIR phosphors that can be effectively excit⁃ed by blue light.LiScSi_(2)O_(6)∶Cr^(3+) can be excited by blue light and emits NIR light peaked at 845 nm with a broad band⁃width of 156 nm and an internal quantum efficiency of 64.4%.Herein,Sc^(3+) is replaced by M ions(M=Ga^(3+),Lu^(3+),Y^(3+),Gd^(3+))to regulate the NIR luminescence.The introduction of M ions is easy to form heterogeneous phases or un⁃dergo phase transformation,thus reducing the NIR luminescence of the titled material.The regulation processes are analyzed based on the crystal structure.
作者
卢紫微
刘永福
罗朝华
孙鹏
蒋俊
LU Ziwei;LIU Yongfu;LUO Zhaohua;SUN Peng;JIANG Jun(School of Materials Science and Chemical Engineering,Ningbo University,Ningbo 315211,China;Ningbo Institute of Materials Technology&Engineering,Chinese Academy of Sciences,Ningbo 315201,China)
出处
《发光学报》
EI
CAS
CSCD
北大核心
2024年第3期407-414,共8页
Chinese Journal of Luminescence
基金
国家自然科学基金(12074393)
浙江省“尖兵”“领雁”计划(2022C01046)
中国科学院青年创新促进会(2021295)~。
