摘要
为指导半导体高温炉构件用高纯TaC涂层的生长调控,采用Thermo-calc软件开展TaC涂层生长过程的高通量热力学模拟计算,研究了沉积温度、压强和前驱体组分比对原料利用效率和TaC涂层纯度等指标的影响。模拟结果表明,在“TaCl_(5)+C_(3)H_(6)+H_(2)”体系中,X(Ta)∶X(C)(摩尔分数比)决定了产物的物相组成,X(H)∶X(C)决定了高纯TaC涂层的形成窗口。当X(Ta)∶X(C)<1时,可以获得高质量TaC涂层,涂层中的主要杂质为游离碳,可以通过提高气氛中氢气的浓度来消除涂层中的游离碳杂质。根据模拟分析结果,推荐的反应窗口为:X(Ta)∶X(C)为0.8~1.0且X(H)∶X(C)≥400,沉积温度为1800~2100 K,沉积压强为5000~10000 Pa,可获得高纯度(>99%)和高原料利用率(>99%)的TaC涂层。
For guiding the growth regulation of high-purity TaC coatings for semiconductor high-temperature furnace components,the high-throughput thermodynamic simulation calculation of TaC coating growth process was carried out by Thermo-calc software,and the effects of dep-osition temperature,pressure and precursor component ratio on raw material utilization efficiency and TaC coating purity were investigated.Sim-ulation results demonstrated that X(Ta)∶X(C)(Mole fraction ratio)determined the phase composition of the products,while X(H)∶X(C)defined the formation window of the high-purity TaC coating in the“TaCl_(5)+C_(3)H_(6)+H_(2)”system.When X(Ta)∶X(C)<1,high-quality TaC coatings could be obtained,and the free carbon was the primary impurity in the coating,which could be eliminated by elevating hydrogen con-centration in the atmosphere.According to the simulation analysis results,the recommended reaction window was X(Ta)∶X(C)of 0.8~1.0 and X(H)∶X(C)≥400,the deposition temperature of 1800~2100 K and deposition pressure of 5000~10000 Pa.Under the above condi-tions,the high purity(>99%)and high material utilization(>99%)TaC coatings could be obtained.
作者
孙清云
陈辉
李士栋
张翅腾飞
SUN Qingyun;CHEN Hui;LI Shidong;ZHANG Chitengfei(Hubei Longzhong Laboratory,Xiangyang 441000,China;China Academy of Mechinery Whan Research Insitute of Materials Protection Co.,Ltd.,Wuhan 430030,China)
出处
《材料保护》
CAS
CSCD
2024年第4期11-19,38,共10页
Materials Protection
基金
湖北省自然科学基金(2022CFB936)
国家自然科学基金(62204179)资助。
关键词
热力学
化学过程
TAC
沉积物
涂层
thermodynamics
chemical process
TaC
deposition
coatings
