摘要
GaN器件由于其更快的开关速度,比硅器件更容易发生严重的开关振荡,也更容易受到栅源电压振荡的影响。为了抑制GaN基半桥结构中的串扰,提出了一种抑制GaN高电子迁移率晶体管(HEMT)栅极正负向串扰的无源钳位驱动电路来抑制栅源电压振荡。采用基本无源元件建立自举驱动回路,并增加三极管以构成从驱动电路到GaN HEMT的低阻抗米勒电流路径,抑制正负向串扰。在LTspice软件下进行电路模拟仿真,并搭建实验平台进行实测验证,结果表明栅源电压的最大正向串扰可降至1.2 V,最大负向串扰可降至1.6 V,漏源电流的正向和负向串扰均降至2 A以下,证明该电路对栅源电压以及漏源电流的振荡均有良好的抑制效果。
GaN devices are more prone to severe switching oscillations than silicon devices due to their faster switching speed,and are also more susceptible to be affected by gate source voltage oscilla⁃tions.In order to suppress crosstalk in GaN based half⁃bridge structures,a passive clamping driving circuit that suppresses the gate positive and negative crosstalk in the GaN high electron mobility transistor(HEMT)was proposed to suppress gate source voltage oscillations.A bootstrap drive circuit was estab⁃lished with the basic passive components,and a low impedance Miller current path from the drive circuit to GaN HEMT was formed by adding a transistor to suppress positive and negative crosstalk.Circuit simu⁃lation was performed with LTspice software,and an experimental platform was built for actual measure⁃ment and verification.The results show that the maximum positive crosstalk of the gate source voltage can be reduced to 1.2 V,the maximum negative crosstalk can be reduced to 1.6 V,and both positive and negative crosstalk of the drain source current can be reduced to below 2 A,proving a good suppression effect of the circuit on the oscillations of the gate source voltage and drain source current.
作者
王忠
秦世清
王福学
边国辉
Wang Zhong;Qin Shiqing;Wang Fuxue;Bian Guohui(School of Automobile and Transportation,Wuxi Institute of Technology,Wuxi 214121,China;Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology,Jiangnan University,Wuxi 214122,China;Hebei Dongsen Electronic Technology Co.,Ltd.,Shijiazhuang 050200,China)
出处
《半导体技术》
CAS
北大核心
2024年第5期483-491,共9页
Semiconductor Technology
