摘要
设计、制造并测试了基于碳化硅材料的横向MOSFET器件和CMOS电路。常温时,N型和P型MOSFET在片测试的阈值电压分别约为5.4 V和-6.3 V;温度达到300℃时,N型和P型MOSFET的阈值电压分别为4.3 V和-5.3 V。由N型和P型MOSFET组成的CMOS反相器在常温下输出的上升时间为1.44μs,下降时间为2.17μs,且在300℃高温条件下仍可正常工作。由CMOS反相器级联成的环形振荡器在常温下的测试工作频率为147 kHz,在高温下也可正常工作。
Lateral MOSFET devices and CMOS circuits based on silicon carbide materials were designed,manufactured,and tested.The threshold voltage at room temperature of N-type MOSFET tested on chip is about 5.4 V,and that of P-type MOSFET is about-6.3 V.When the temperature reaches 300℃,the threshold voltages are 4.3 V and-5.3 V,respectively.The rise time of the invert⁃er composed of N-type MOSFET and P-type MOSFET at room temperature is 1.44μs,and the fall time is 2.17μs.And it can still work well under high temperature conditions of 300℃.The oscillator cascaded with CMOS inverters has a test operating frequency of 147 kHz at room temperature and can also operate normally at high temperature.
作者
陈浩炜
刘奥
黄润华
杨勇
刘涛
柏松
CHEN Haowei;LIU Ao;HUANG Runhua;YANG Yong;LIU Tao;BAI Song(State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology,Nanjing Electronic De-vices Institute,Nanjing,210016,CHN)
出处
《固体电子学研究与进展》
CAS
2024年第2期109-112,118,共5页
Research & Progress of SSE
