摘要
以碳化硅金属-氧化物半导体场效应晶体管(SiC MOSFET)为代表的第3代半导体功率器件因其优异的开关特性,在新能源等领域被广泛应用,但面对高速开关耦合寄生参数所产生的负面效应,使得测试系统难以快速、准确评估其开关瞬态等相关参数。首先,根据改进的双脉冲模型设计了一种高精度测试系统,硬件主要包括功率测试板、集成脉冲发生器的控制板及驱动板,软件主要利用Keil编写控制板程序,LabVIEW进行用户界面设计。其次,还探讨了电压和电流测量技术、连接技术和测量数据的处理,并且结合器件数据手册及仿真结果分析实测结果,表明该系统测量误差小,量程大,抗干扰能力强,可信度高,能为优化第3代半导体器件和驱动电路的设计和应用提供有益支持。
The third-generation semiconductor power devices,represented by silicon carbide metal-oxide-semiconductor field-effect transistors(SiC MOSFET),are widely used in fields such as new energy due to their excellent switching characteristics.However,the negative efects caused by high-speed switching coupling parasitic parameters make it difficult to rapidly and accurately evaluate the switching transient and other related parameters of these devices.Firstly,a high-precision test system based on an improved double-pulse model is designed.The hardware mainly includes a power test board,a control board with an integrated pulse generator,and a driver board.The software utilizes Keil to write control board programs and LabVIEW for user interface design.Secondly,voltage and current measurement techniques,connection technologies,and measurement data processing are discussed.By combining device datasheets and simulation results to analyze the measured results,it demonstrates that the system has low measurement error,wide measurement range,strong anti-interference ability,and high reliability.It can provide valuable support for optimizing the design and application of the third-generation semiconductor devices and driver circuits.
作者
伍娟
崔昊杨
杨程
文阳
WU Juan;CUI Hao-yang;YANG Cheng;WEN Yang(Shanghai University of Electric Power,Shanghai 201306,China;不详)
出处
《电力电子技术》
2024年第3期134-137,共4页
Power Electronics
基金
国家自然科学基金(52177185)
上海市自然科学基金(23ZR1424400)。
关键词
晶体管
碳化硅
测试系统
开关特性
transistors
silicon carbide
test system
switching characteristics
