摘要
GaN功率放大器单片微波集成电路(MMIC)的热积累问题是制约其进一步高度集成和大功率化应用的主要技术瓶颈,针对该散热问题,提出了GaN功率放大器MMIC的近结区热阻解析模型。在简单多层叠加的热阻解析模型的基础上,细化至芯片的近结区域,引入了位置矫正因子矩阵和耦合系数矩阵,并通过加栅窗的方式建立了芯片近结区的热阻解析模型。该模型考虑了GaN功率放大器MMIC的特点以及衬底的晶格热效应,可以更准确地表征芯片结温。采用红外热成像仪对6种GaN功率放大器MMIC在不同工作条件下进行了热测试,对比仿真和测试结果发现,解析模型的结温预测误差在10%以内,说明该模型可以准确地表征GaN功率放大器MMIC的热特性,进而用于优化和指导电路拓扑设计。
The thermal accumulation problem of GaN power amplifier monolithic microwave integrated circuit(MMIC)is the main technical bottleneck that restricts its further high integration and high-power application.To address this heat dissipation problem,the near-junction region thermal resistance analytical model of GaN power amplifier MMIC was proposed.On the basis of a simple multi-layer stacked thermal resistance analytical model,it was refined to the near-junction region of the chip,and a position correction factor matrix and a coupling coefficient matrix were introduced,and the near-junction region thermal resistance analytical model of the chip was established by the window technique of heat channels.The characteristics of the GaN power amplifier MMIC and the lattice thermal effect of the substrate were considered in this model,which could more accurately characterize the junction temperature of the chip.Six kinds of GaN power amplifier MMICs were tested by using infrared thermography under different operating conditions.And the comparisons of simulation and test results show that the junction temperature prediction error of the analytical model is within 10%,indicating that the model can accurately characterize the thermal characteris-tics of GaN power amplifier MMIC,thus it can be used to optimize and instruct circuit topology design.
作者
郜佳佳
游恒果
李静强
舒国富
Gao Jiajia;You Hengguo;Li Jingqiang;Shu Guofu(The 13th Research Institute,CETC,Shijiazhuang 050051,China;National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang 050051,China)
出处
《半导体技术》
CAS
北大核心
2024年第4期380-387,共8页
Semiconductor Technology
关键词
GaN功率放大器
单片微波集成电路(MMIC)
近结区
热阻解析模型
红外热成像
热特性
GaN power amplifier
monolithic microwave integrated circuit(MMIC)
near-junction region
thermal resistance analytical model
infrared thermography
thermal characteristic
