摘要
二维过渡金属碳/氮化物(MXenes)自2011年被首次报道以来,凭借其特殊的二维层状结构、优异的导电性和电化学性能在能源、催化、传感、电磁屏蔽和微波吸收等领域吸引了极大关注。近几年,随着对该材料认识的不断加深,其在光电领域的研究也不断深入。与其它领域不同,光电器件聚焦于延伸MXenes材料半导体性质,通过设计表面官能团、精准控制层数等来打开材料带隙,从而使其从金属性质转变为半导体性质。本文主要围绕MXenes材料的光电性质,介绍其在柔性光电子器件中的应用,系统阐述MXenes材料在透明电子器件、光电探测器、图像传感器、光电晶体管、人工神经视觉网络系统的应用前沿现状与趋势,并展望了MXenes基柔性光电器件面临的挑战以及未来发展前景。
Two-dimensional(2D)transition metal carbides/nitrides(MXenes),since their discovery in 2011,have attracted great attention in the fields of energy storage,catalysis,sensors,electromagnetic interference shielding and microwave absorption and so on,owing to their special 2D layered structure,excellent electrical conductivity and electrochemical properties.In recent years,with the deep understanding of MXenes,the research on the realm related to optoelectronic properties has been widely concerned.Unlike other application fields,optoelectronic devices based on MXenes focus on extending semiconductor properties,including tunable band gap of the MXenes via design of the surface functional groups and layer control,etc.,so as to achieve their transformation from metal to semiconductor properties.This paper revolves around the photoelectric properties of MXenes,mainly introduce its application in flexible optoelectronic devices,and systematically describe their current status and trend in transparent electronic devices,photodetectors,image sensors,transistors,and artificial neural vision network systems.The challenges and future development prospects of MXenes-based flexible optoelectronic devices are also proposed.
作者
李腊
沈国震
LI La;SHEN Guozhen(School of Integrated Circuits and Electronics,Beijing Institute of Technology,Beijing 100081,China;Institute of Flexible Electronics,Beijing Institute of Technology,Beijing 102488,China)
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2024年第2期186-194,共9页
Journal of Inorganic Materials
基金
国家自然科学基金(61888102)
北京市自然基金(L223006)。
