摘要
Organic donor-acceptor semiconductors exhibit great potential in photothermal conversion.However,it is still challenging to achieve pure organic materials with broad absorption comparable with inorganic materials such as graphene.Herein,two D-AD type DPA-BT-O4 and NDI-TPA-O4 and three D-A-π-A-D type Th-O4,Th2-O4,and IDT-O4 were readily prepared via two high-yield steps and simple air oxidization.The stability can be attributed to their multiple resonance structures based on the aromatic nitric acid radical mechanism.Compared with the D-A-D radicals,the conjugation extension of the D-A-π-A-D radicals endows them with a narrowed band gap and broad absorption in powder.Interestingly,the IDT-O4 powder with aggregation-induced radical effect exhibits broad absorption between 300 and 2500 nm,which is comparable with graphene and other inorganic materials.Under irradiation of 0.9 W/cm^(2)(808 nm),the temperature of IDT-O4 powder rises to 250℃within 60 s.The water evaporation conversion efficiency of 94.38%and an evaporation rate of 1.365 kg/m^(2)h^(−1)under one sun illumination were achieved.IDT-O4 stands as one of the most efficient photothermal conversion materials among pure organic materials via a rational design strategy.
基金
National Natural Science Foundation of China,Grant/Award Number:51973063
Tip-top Scientific and Technical Innovative Youth Talents of Guangdong Special Support Program,Grant/Award Number:2019TQ05C890
Opening Project of Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education
Jianghan University,Grant/Award Number:JDGD-202010
Pearl River S&T Nova Program of Guangzhou,Grant/Award Number:201710010194
Fund of Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates,Grant/Award Number:2019B030301003。
