摘要
二维过渡金属氧化物材料的出现为高密度、低功耗的忆阻器研究提供了机会.其中,α-MoO_(3)作为功能层应用于忆阻器是最有希望的候选材料之一.然而,对α-MoO_(3)基忆阻器的导电机制的研究仍然不足.本工作中,我们制作了cross-point结构的α-MoO_(3)忆阻器,通过电极工程优化了其忆阻性能,并详细研究了其电阻转变机制.通过引入具有Ag/Ti叠层结构的混合电极实现了多值非挥发性存储性能.基于电流-电压曲线拟合和温度依赖特性测试结果,结合高分辨透射电镜微观表征,我们提出了α-MoO_(3)忆阻器的双重导电机制.在电阻转变过程中,阳离子和阴离子的迁移都对电导调制有贡献,两种由Ag和氧空位组成的导电丝同时存在.该器件展现出稳定的忆阻特性,超过103的耐久性、大于104的开关比ROFF/RON、多值存储特性和快速响应(10μs).本工作为二维α-MoO_(3)纳米片在高密度存储中的应用提供了理论基础.
Emerging two-dimensional(2D)transitionmetal oxides provide significant opportunities for the development of memristors with high density and low power consumption.2Dα-MoO_(3)is one of the most promising candidates used in memristors as a functional layer.However,previous studies have not sufficiently investigated the conducting mechanism of memristors based onα-MoO3.In this work,we fabricated a cross-point structured memristor based onα-MoO_(3)with different electrodes,optimized its performance,and investigated its conducting mechanism in detail.By the introduction of a hybrid electrode structure with an Ag/Ti stack,multi-level non-volatile storage properties were realized.Based on the results of current-voltage curve fitting and temperature characterization combined with high-resolution transmission electron microscopy microscopic characterization,a dual-conductivity mechanism was proposed.During the resistive switching process,the migration of both cations and anions contributed to conductivity modulation,and two types of conducting filaments composed of Ag and oxygen vacancies were simultaneously formed.The device exhibited good electrical characteristics,including>103 endurance,high Off-state resistance to ON-state resistance ratio(104),multilevel memristive modes,and fast response(10μs).The present work validates the application potential of 2Dα-MoO_(3)nanosheets in high-density storage.
作者
单欣
刘平
王芳
谢杨杨
魏俊青
马泽夏
石瑶
孙翰
鲁世豪
宋志棠
闫小兵
张楷亮
Xin Shan;Ping Liu;Fang Wang;Yangyang Xie;Junqing Wei;Zexia Ma;Yao Shi;Han Sun;Shihao Lu;Zhitang Song;Xiaobing Yan;Kailiang Zhang(School of Materials Science and Engineering,Tianjin University of Technology,Tianjin 300384,China;Tianjin Key Laboratory of Film Electronic&Communication Devices,School of Integrated Circuit Science and Engineering,Tianjin University of Technology,Tianjin 300384,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;College of Electronic and Information Engineering,Hebei University,Baoding 071000,China)
基金
supported by the National Key Research and Development Program of China(2017YFB0405600)
the Natural Science Foundation of Tianjin(18JCYBJC85700 and 18JCZDJC30500)
the National Natural Science Foundation of China(62001326,61274113,and 61404091)
the Open Project of State Key Laboratory of Functional Materials for Information(SKL202007)
the Science and Technology Planning Project of Tianjin(20ZYQCGX00070)
the Innovation and Entrepreneurship Project for College Students(202110060049 and 202110060153).
