摘要
本文基于金属有机化学气相沉积(MOCVD)技术,以少层氮化硼(BN)作为插入层在4英寸蓝宝石衬底上开展范德瓦耳斯异质外延GaN微波材料的生长机理及应力调控方面的研究,探讨了AlN成核工艺对GaN缓冲层生长机制的影响,以及与材料晶体质量、应力及电学性能等之间的关联。提出了一种基于AlN/AlGaN复合成核技术的应力调控方案,首次实现了大尺寸范德瓦耳斯(vdW)异质外延材料应力的有效管控,研制的GaN微波材料的弯曲度(Bow)为+20.4μm,(002)/(102)面半峰全宽为471.6/933.5 arcsec,表面均方根粗糙度为0.52 nm,电子迁移率达到2000 cm^(2)/(V·s)。最后,基于机械剥离实现了大尺寸晶圆级GaN微波材料与蓝宝石衬底的分离,为高导热衬底转移提供便利,为大功率射频器件的制作创造条件。
Based on metal organic chemical vapor deposition(MOCVD),growth mechanism and stress modulation of van der Waals(vdW)heteroepitaxial GaN microwave material were studied with few-layer BN as an interlayer on 4-inch sapphire substrates.The influence of AlN nucleate process on growth mechanism of GaN buffer layer and its correlation with crystalline quality,stress,and electrical properties were discussed.A stress modulation scheme based on AlN/AlGaN composite nucleation process is proposed,achieving stress well in control for large-size vdW heteroepitaxy firstly.The as-grown GaN microwave material possesses a wafer bow of+20.4μm,fullwidth at half maximum of GaN(002)/(102)peaks of 471.6/933.5 arcsec,root-mean-square roughness of 0.52 nm and electron mobility of 2000 cm^(2)/(V·s).Finally,large-size wafe-scale GaN microwave material was successfully separated from sapphire substrate by a mechanical lift-off process,providing convenience for transfering to high thermal conductivity substrates and creating conditions for fabricating high-power RF devices.
作者
李传皓
李忠辉
彭大青
张东国
杨乾坤
罗伟科
LI Chuanhao;LI Zhonghui;PENG Daqing;ZHANG Dongguo;YANG Qiankun;LUO Weike(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing 210016,China;CETC Key Laboratory of Carbon-based Electronics,Nanjing 210016,China)
出处
《人工晶体学报》
CAS
北大核心
2024年第2期252-257,共6页
Journal of Synthetic Crystals
