摘要
氧化镓(Ga_(2)O_(3))具有超宽禁带、高理论击穿电场强度、高Baliga优值(BFOM)等优异特性,是制备高压大功率器件的理想半导体材料之一。但是,实现良好的器件表面钝化,尤其是改善绝缘介质/Ga_(2)O_(3)的界面特性仍然是Ga_(2)O_(3)器件研究中亟需解决的关键技术难题。首先,对Ga_(2)O_(3)金属-氧化物-半导体(MOS)器件表面钝化、高k介质能带工程的研究进展进行分析、对比;然后,对适用于Ga_(2)O_(3)器件(晶体管、二极管)表面钝化技术的重要研究进展进行了综述,包括表面边缘终端设计、复合钝化工艺、钙钛矿型氧化物钝化等;最后,对Ga_(2)O_(3)器件表面钝化的研究方向进行了展望。
Gallium oxide(Ga_(2)O_(3))is one of the most ideal semiconductor materials for the prepara-tion of high voltage and high power devices due to its excellent characteristics such as ultra-wide bandgap,high theoretical breakdown electric field strength,and high Baliga's figure of merit(BFOM).However,realizing good surface passivation of devices especially improving interfacial properties of insu-lator/Ga_(2)O_(3)is still a key technical issue in the development of Ga_(2)O_(3)devices.Firstly,the research pro-gress in surface passivation and high-k dielectric energy band engineering of Ga_(2)O_(3)metal-oxide-semicon-ductor(MOS)devices is analyzed and compared.Then,the essential research progress of surface passi-vation technology for Ga_(2)O_(3)devices(transistors and diodes)is reviewed,including surface edge termi-nation design,multi-passivation process,perovskite oxide passivation,etc.Finally,the research directions of Ga_(2)O_(3)device surface passivation are prospected.
作者
张弘鹏
贾仁需
陈铖颖
元磊
张宏怡
彭博
Zhang Hongpeng;Jia Renxu;Chen Chengying;Yuan Lei;Zhang Hongyi;Peng Bo(School of Opto-Electronic and Communication Engineering,Xiamen University of Technology,Xiamen 361024,China;School of Microelectronics,Xidian University,Xi'an710071,China)
出处
《半导体技术》
北大核心
2023年第12期1062-1070,共9页
Semiconductor Technology
基金
国家自然科学基金资助项目(U21A20501)
福建省自然科学基金引导性项目(2023H0052)
福建省中青年教师教育科研项目(JAT220341)
厦门市自然科学基金资助项目(3502Z20227070)
厦门市重大科技项目(3502Z20221022)
厦门理工学院高层次人才科研项目(YKJ22049R)。
关键词
表面钝化
氧化镓(Ga_(2)O_(3))
能带工程
表面边缘终端
高k介质
surface passivation
gallium oxide(Ga_(2)O_(3))
energy band engineering
surface edge termination
high-k dielectric EEACC:2520E
2550
