摘要
高功率880nm激光芯片的结构设计,均采用大光学腔和小于0.62cm-1的低内损,并通过MOCVD(Metal-organic Chemical Vapor Deposition)工艺实现这种结构的外延。通过一系列标准和特殊制造工艺,实现了200μm发射器宽度和4mm腔长激光芯片。在P面朝下贴装在AlN陶瓷基板上后,测试880nm激光器的阈值电流为1.1A,斜率效率为1.11W/A,中心工作波长为11A时为880.8nm,光谱半高宽(FWHM)为2.2nm。在16A的连续电流和20°C的冷却水温下进行加速老化试验,老化时间达到2000h时无故障。根据ISO/FDIS 17526的Arrhenius模型,MTTF(Mean time to failure)计算为20万小时。
Large optical cavity and low internal losses less than 0.62cm-1 were both used in the 880nm laser structure design,and the epitaxy of this structure was implemented by MOCVD(Metal-organic Chemical Vapor Deposition).Laser chip with 200μm emitter width and 4mm cavity length was achieved by a series of standard and special manufacturing processes.After mounted on AlN sub-mounts p-side down,the threshold current of the 880nm laser was tested to be 1.1A,the slope efficiency was 1.11W/A,the center operation wavelength was 880.8nm at 11A with the full width at half maximum(FWHM)of 2.2nm.The accelerated aging tests were carried out with the continuous current stress of 16A and the cooled water temperature of 20℃,and there was no failure when the aging time reached 2000h.The MTTF(Mean time to failure)was calculated to be 200,000 hours base on Arrhenius model under the ISO/FDIS 17526.
作者
张欢欢
余良清
阮仕环
罗崇禧
祝攀飞
Zhang Huanhuan;Yu Liangqing;Ruan Shihuan;Luo Chongxi;Zhu Panfei(Shenzhen Huatongwei International Inspection Co.,Ltd.,Shenzhen Guangdong 518000)
出处
《中国仪器仪表》
2024年第1期70-72,共3页
China Instrumentation
