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ALD反应室流场分析及优化研究

Analysis and Optimization of Flow Field in ALD Reaction Chamber
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摘要 为解决用于钙钛矿SnO_(2)电子传输层镀膜工艺的原子层沉积(ALD)设备存在的镀膜均匀性问题,基于计算流体力学(CFD)仿真软件Fluent,从流场的角度对设备反应腔体进行了分析。根据流场分析的结果,进行了反应室结构优化设计。并通过工艺试验,验证了流场的改善对镀膜均匀性有明显帮助作用;对ALD设备流场分析及相关设备的设计优化具有一定参考意义。 In order to solve the coating uniformity problem of Atomic Layer Deposition(ALD)equipment used in the perovskite SnO_(2) electron transport layer coating process,the reaction chamber of the equipment is analyzed from the perspective of flow field based on Computational Fluid Dynamics(CFD)simulation software fluent.Based on the results of flow field analysis,the reaction chamber structure was optimized and designed.And through process experiments,it was verified that the improvement of the flow field has a significant helpful effect on the uniformity of the coating.The research in this article has certain reference significance for the flow field analysis of ALD equipment and the design optimization of related equipment.
作者 雷睿 谢国杨 成秋云 LEI Rui;XIE Guoyang;CHENG Qiuyun(Hunan Red Solar Photoelectricity Science and Technology Co.,Ltd.,Changsha 410205,China;National Photovoltaic Equipment Engineering Technology Research Center,Changsha 410205,China)
出处 《电子工业专用设备》 2023年第5期15-21,95,共8页 Equipment for Electronic Products Manufacturing
关键词 原子层沉积 计算流体力学 钙钛矿 镀膜均匀性 Atomic layer deposition Computational fluid dynamics Perovskite Coating uniformity
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  • 1Yabe H, Yuuki A, Matsui Y. Study of Surface Reaction Probability of CFx Radicals by Trench Deposition Method [ J ]. Japanese Journal of Applied Physics, 1991, 30( 11 ) :2873-2875t. 被引量:1
  • 2Alayo M I, Pereyra I, Carreno M N P. Thick SiOx Ny and SiO2 Films Obtained by PECVD Technique at Low Temperatures [ J ]. Thin Solid Films, 1998,332:40-45. 被引量:1
  • 3Komiyama H, Shimogaki Y, Egashira Y. Chemical Reaction Engineering in the Design of CVD Reactors [ J ]. Chemical Engineering Science, 1999,54 : 1941-1957. 被引量:1
  • 4Sansonnens L, Bondkowski J, Mousel S, et al. Development of a Numerical Simulation Tool to Study Uniformity of Large Area PECVD Film Processing[ J ]. Thin Solid Films,2003,427:21-26. 被引量:1
  • 5Kim Y, Boo J, Hong B, et al. Effects of Showerhead Shapes on the Flow fields in a RF-PECVD Reactor[J]. SuoCace & Coatings Technology, 2005,193 : 88 -89. 被引量:1
  • 6Caquinean H, Enache I, Gherardi N, et al. Influence of Gas Flow Dynamics on Discharge Stability and on the Uniformity of Atmospheric Pressure PECVD Thin Film[ J ]. Journal of Physics D :Applied Physics ,2009,42 (12) : 125201-125207. 被引量:1
  • 7Geiser J, Arab M. Modeling and Simulation of a Chemical Vapor Deposition[ J]. Journal of Applied Mathematics ,2011, (2011 ) :1155. 被引量:1
  • 8Prada A, Civan F. Modification of Darcy Law for the Threshold Pressure Gradient[ J]. Journal of Petroleum Science And Engineering, 1999,22 : 237 -240. 被引量:1
  • 9Masoodi R, Pillai K M. Darcy's Law-Based Model for Wicking in Paper-like Swelling Porous Media [ J ]. AIChE Journal, 2010,56 (9) :2257- 2267. 被引量:1
  • 10. Versteeg H K, Malalasekera W. An Introduction to Computational Fluid Dynamics-The Finite Volume Method [ M ]. Longman Scientific & Technical, 1995. 被引量:1

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