摘要
简述了碳纳米管场效应晶体管(CNTFET)中作为沟道材料的碳纳米管的基本辐射效应原理及其在抗辐射领域的优势,总结了近年来CNTFET在辐射效应机理和加固领域的研究进展。介绍了不同辐射条件在碳纳米管材料和不同结构的CNTFET中诱发的位移损伤效应机理,重点介绍了电介质是影响器件总剂量效应的主要因素,辐射环境也是影响器件辐照后性能变化的重要因素,并针对这两点总结了加固方法及器件和电路的设计,对国内外研究中不同结构的电路的抗辐射能力进行评述。最后介绍了器件受单粒子效应影响的机理,对比了碳基晶体管器件和硅基晶体管器件的抗辐射能力,并展望了CNTFET及其电路的未来太空应用发展。
The basic principle of radiation effect in carbon nanotubes as channel materials in carbon nanotube field effect transistors(CNTFETs)and their advantages in the field of radiation resistance are briefly described,and the research progress of CNTFETs in the field of radiation effect mechanism and reinforcement in recent years is summarized.The mechanism of the displacement damage effect induced by different radiation conditions in carbon nanotube materials and CNTFETs with different structures is introduced,emphasizing that the dielectric is the main factor affecting the total dose effect of the devices,and the radiation environment is the key factor affecting the performance change of the device after irradiation.And according to these two points,the reinforcement methods and designs of devices and circuits are summarized,and the radiation resistance capabilities of circuits with different structures are reviewed.Finally,the mechanism of devices affected by single event effects is introduced,the radiation resistance capabilities of carbon-based devices and silicon-based devices are compared,and the future space application development of CNTFETs and circuits is prospected.
作者
舒焕
陆芃
闫江
Shu Huan;Lu Peng;Yan Jiang(School of Information Science and Technology,North China University of Technology,Beijing 100144,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
出处
《微纳电子技术》
CAS
北大核心
2023年第9期1344-1355,共12页
Micronanoelectronic Technology
基金
国家自然科学基金(61874002)。
