摘要
后摩尔时代,TSV三维互连成为高端电子器件制造的关键技术之一.TSV电镀铜填充是主流金属化的方法面向晶圆级TSV互连工艺集成应用.本文总结了电镀铜添加剂的国内外研究与发展现状,主要包括加速剂、抑制剂以及季铵盐整平剂、含氮聚合物整平剂、含氮杂环整平剂、无机分子整平剂的分子结构,添加剂与Cl−协同作用关系,主要添加剂分子之间协同作用关系,TSV电镀铜填充机理模型等,并凝练提出了TSV电镀铜添加剂及作用机理研究面临的关键问题,以期为TSV添加剂以及作用机理的研究带来一定启发.
In the post-Moore era,through silicon via(TSV)three-dimensional interconnection has become one of the key technologies in the manufacturing of high-end electronic devices,while the mainstream method of TSV metallization is filling vias with copper electroplating.For the integration applications of wafer-level TSV interconnect process,this paper summarizes the current research and development of copper electroplating additives at home and abroad,including accelerators,suppressants and quaternary ammonium levelers,nitrogen-containing polymer levelers,nitrogen-containing heterocyclic levelers,inorganic levelers,additives and chloride ion synergistic relationship,the synergistic relationship between main additives molecules,TSV electroplated copper filling mechanism model.The key issues faced by the studies of TSV copper-electroplating additives and their action mechanisms are extracted and presented for bringing some inspiration to the study of TSV additives and their action mechanism.
作者
马盛林
王燕
陈路明
杨防祖
王岩
王其强
肖雄
Shenglin Ma;Yan Wang;Luming Chen;Fangzu Yang;Yan Wang;Yan Wang;Qiqiang Wang;Xiong Xiao(Pen-Tung Sah Institute of Micro-Nano Science and Technology,Xiamen University,Xiamen 361005,China;National Engineering Research Center of high-end electronic Chemicals,Xiamen University,Xiamen 361005,China;College of Chemistry and Chemical Engineering,Xiamen University,Xiamen 361005,China;Xiamen University of Technology,Xiamen 361024,China)
出处
《中国科学：化学》
CAS
CSCD
北大核心
2023年第10期1891-1905,共15页
SCIENTIA SINICA Chimica
基金
厦门大学校长基金项目(编号:2072022)。
关键词
TSV
电镀铜
添加剂
作用机理
TSV电镀铜填充机理
TSV
copper electroplating
additive
action mechanism
TSV electroplated copper filling mechanism
