摘要
为满足集成电路发展需要,实验制备Al/Er_(2)O_(3)/InP金属氧化物半导体(MOS)电容器.采用ALD技术分别制备了超薄的Al_(2)O_(3),HfO_(2)和HfAlO钝化层,研究了不同种类的钝化层对InP-MOS器件界面和电学特性的影响.实验结果表明,钝化层能有效减小界面态密度,抑制漏电流.其中,HfAlO钝化的MOS电容展现出最小的界面态密度和最佳的器件性能.相比于未钝化的器件,HfAlO钝化电容的界面态密度从3.53×10^(13)cm^(-2)降至4.81×10^(12)cm^(-2),介电常数从7.7提高到23.8,漏电流密度从2.95×10^(-9)A/cm^(2)降低到1.67×10^(-10)A/cm^(2).HfAlO钝化层能有效减低界面态密度,并提高器件电学性能.
In order to meet the needs of the development of integrated circuits,Al/Er_(2)O_(3)/InP metal oxide semiconductor(MOS)capacitors were fabricated.Ultra-thin Al_(2)O_(3),HfO_(2),and HfAlO passivation layers were prepared based on ALD technology to investigate the effects of different passivation layers on the interface and electrical properties of InP-MOS devices.The experimental results show that the passivation layers can effectively reduce the interface state density and suppress the leakage current.Additionally,HfAlO-passivated MOS capacitors exhibit minimal interface state density and optimal device performance.Compared with non-passivated devices,HfAlO-passivated MOS capacitors reduce the interface density of state(Dit)from 3.53×10^(13)cm^(-2)to 4.81×10^(12)cm^(-2),the dielectric constant increases from 7.7 to 23.8,and the leakage current density decreases from 2.95×10^(-9)A/cm^(2)to 1.67×10^(-10)A/cm^(2).HfAlO passivation layers can effectively reduce the interface state density,and improve the electrical performance of the device.
作者
吴秋菊
方泽波
WU Qiuju;FANG Zebo(School of Mathematics,Physics and Information Science,Shaoxing University,Shaoxing,Zhejiang 312000)
出处
《绍兴文理学院学报》
2023年第8期54-59,共6页
Journal of Shaoxing University
基金
国家自然科学基金资助项目“稀土基高k栅介质钝化层InP叠层栅构筑及其物性研究”(51872186).
