摘要
设计实现了一种晶圆级封装的三位MEMS数控衰减器,工作频段DC~15 GHz,衰减范围0~35 dB,步进5 dB。衰减器采用MEMS工艺实现,信号传输采用共面波导(CPW)结构,6个直接接触式悬臂梁MEMS开关对称放置实现不同衰减量的切换,每个开关带有三个触点,电阻网络采用T型结构,整个衰减器实现晶圆级封装。测试结果显示,DC~15 GHz频段内实现了8个衰减态,衰减器插入损耗小于1.7 dB,回波损耗小于-15 dB,衰减平坦度小于±5%,功耗几乎为零。芯片尺寸为2.7 mm×2.7 mm×0.8 mm。
A 3-bit MEMS digital attenuator with wafer-level packaging was implemented,which had a working frequency range of DC to 15 GHz,an attenuation range of 0 to 35 dB and a step size of 5 dB.The attenuator was fabricated using MEMS process and employed coplanar waveguide(CPW)structure for signal transmission.Six direct contact MEMS switches were symmetrically placed to real⁃ize different attenuation states.Each switch had three contacts,and the resistive network adopted a Ttype structure.The entire attenuator was packaged at the wafer level.Test results show that eight at⁃tenuation states are achieved within the frequency range of DC⁃15 GHz,with the insertion loss less than 1.7 dB,the return loss less than-15 dB,the attenuation flatness less than±5%,and the power consumption is almost negligible.The chip size is 2.7 mm×2.7 mm×0.8 mm.
作者
孙俊峰
姜理利
刘水平
郁元卫
朱健
黎明
陈章余
SUN Junfeng;JIANG Lili;LIU Shuiping;YU Yuanwei;ZHU Jian;LI Ming;CHEN Zhangyu(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;Nanjing Engineering Branch,Jiangsu Union Technical Institute,Nanjing,211135,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2023年第4期353-358,共6页
Research & Progress of SSE
