摘要
近年来,全无机铯铅卤化钙钛矿CsPbX_(3)(X=Cl,Br,I)纳米晶(NCs)材料因具有长载流子寿命、强光吸收、低成本制造和带隙可调性等独特的性能已成为研究的热点,但专注于CsPbBr_(3)纳米晶瞬态光电导的相关研究却很少。本工作通过配体辅助再沉淀法制备了CsPbBr_(3)纳米晶体,并改进了光电导薄膜样品的制样方法和真空瞬态光电导测试装置,研究了不同温度和不同激发功率对CsPbBr_(3)纳米晶瞬态光电导的影响。不同温度的瞬态光电导实验结果表明,在133~273 K温度范围内,光生电流衰减速率随着温度增加而逐渐减小,而在273~373 K温度范围内,光生电流衰减速率随着温度升高而逐渐增大。不同激发功率的瞬态光电导实验表明,激发功率从200 mW逐渐增大到1000 mW时,光生电流衰减速率增大。本工作的研究方法为研究光激发光生载流子的动力学相关行为提供了一个的新思路。
In recent years,all-inorganic cesium-lead halogenated perovskite CsPbX_(3)(X=Cl,Br,I)nanocrystalline(NCs)materials have become the focus of scientific research due to their unique properties such as long carrier life,strong light absorption,low-cost manufacturing,and band gap adjustability.However,the transient photoconductivity of CsPbBr_(3) nanocrystals have been hardly researched.In this work,CsPbBr_(3) nanocrystals were prepared by ligand-assisted re-precipitation method.Then their photoconductive sample preparation and test device of vacuum transient photoconductivity were improved.Effects of different temperatures and different excitation powers on transient photoconductivity of CsPbBr_(3) nanocrystals were studied.Experiment results show that the photo-generated current decay rate is gradually reduced within the temperature range from 133 K to 273 K,and increases gradually within the temperature range from 273 K to 373 K with temperature increasing.Results of excitation power-dependent show that the photo-generated current decay rate increases when the excitation power increases from 200 to 1000 mW.The research method of this study provides a new idea for studying the dynamics related behavior of photoexcited photo-generated carriers.
作者
樊家顺
夏冬林
刘保顺
FAN Jiashun;XIA Donglin;LIU Baoshun(School of Materials Science and Engineering,Wuhan University of Technology,Wuhan 430070,China;State Key Laboratory of Silicate Materials for Architectures,Wuhan University of Technology,Wuhan 430070,China)
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2023年第8期893-900,共8页
Journal of Inorganic Materials
基金
国家自然科学基金(51772230)。
