摘要
二维过渡金属二硫族化合物(TMDs)因其原子级厚度、高载流子迁移率和超快电荷转移等优点而被认为是下一代半导体器件的核心材料.与传统半导体工业类似,晶圆级TMDs材料的批量生产是其集成电路发展的先决条件.然而,由于生长过程中需要严格满足多种前驱体的有效传输,TMDs晶圆的制备能力通常局限在每批次单片和小片(主要尺寸为2~4英寸).本研究开发了一种用于批量生产晶圆级TMDs的模块化生长策略,可以制造从2英寸(每批15片)到突破性的12英寸(每批3片)的TMDs晶圆.其中,每个模块包括供应TMDs晶圆生长的自充足的局域前驱体供应单元,通过将多个模块堆叠组装形成阵列可实现批量化制备.利用包括光谱学、电子显微镜和电学测量在内的多种表征技术,可以证明制得的单层薄膜具有高结晶度和大面积均匀性.此外,该模块化单元可以将制备的晶圆级MoS_(2)取代转换为多种结构,例如,Janus型MoSSe结构,MoS_(2(1-x))Se_(2x)合金以及MoS_(2)-MoSe_(2)平面异质结等,充分体现了本制备策略的可扩展性.本研究展现了高质量和高产量的晶圆批量生产能力,有望推动二维半导体从实验室规模到工业化规模的无缝过渡,实现与传统硅基技术的互补.
Two-dimensional(2D)transition metal dichalcogenides(TMDs)are regarded as pivotal semiconductor candidates for next-generation devices due to their atomic-scale thickness,high carrier mobility and ultrafast charge transfer.In analog to the traditional semiconductor industry,batch production of wafer-scale TMDs is the prerequisite to proceeding with their integrated circuits evolution.However,the production capacity of TMD wafers is typically constrained to a single and small piece per batch(mainly ranging from 2 to 4 inches),due to the stringent conditions required for effective mass transport of multiple precursors during growth.Here we developed a modularized growth strategy for batch production of wafer-scale TMDs,enabling the fabrication of 2-inch wafers(15 pieces per batch)up to a record-large size 12-inch wafers(3 pieces per batch).Each module,comprising a self-sufficient local precursor supply unit for robust individual TMD wafer growth,is vertically stacked with others to form an integrated array and thus a batch growth.Comprehensive characterization techniques,including optical spectroscopy,electron microscopy,and transport measurements unambiguously illustrate the high-crystallinity and the large-area uniformity of as-prepared monolayer films.Furthermore,these modularized units demonstrate versatility by enabling the conversion of as-produced wafer-scale MoS_(2)into various structures,such as Janus structures of MoSSe,alloy compounds of MoS_(2(1-x))Se_(2x),and in-plane heterostructures of MoS_2-MoSe_2.This methodology showcases high-quality and high-yield wafer output and potentially enables the seamless transition from lab-scale to industrial-scale 2D semiconductor complementary to silicon technology.
作者
薛国栋
隋鑫
殷鹏
周子琦
李修臻
程阳
郭泉林
张帅
文耀
左勇刚
赵翀
吴慕鸿
高鹏
李群仰
何军
王恩哥
张广宇
刘灿
刘开辉
Guodong Xue;Xin Sui;Peng Yin;Ziqi Zhou;Xiuzhen Li;Yang Cheng;Quanlin Guo;Shuai Zhang;Yao Wen;Yonggang Zuo;Chong Zhao;Muhong Wu;Peng Gao;Qunyang Li;Jun He;Enge Wang;Guangyu Zhang;Can Liu;Kaihui Liu(State Key Laboratory for Mesoscopic Physics,Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University,Beijing 100871,China;International Centre for Quantum Materials,Collaborative Innovation Centre of Quantum Matter,Peking University,Beijing 100871,China;Key Laboratory of Quantum State Construction and Manipulation(Ministry of Education),Department of Physics,Renmin University of China,Beijing 100872,China;Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials,Peking University,Beijing 100871,China;Applied Mechanics Laboratory,Department of Engineering Mechanics,Tsinghua University,Beijing 100084,China;Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education,Wuhan University,Wuhan 430072,China;Key Laboratory of Unconventional Metallurgy(Ministry of Education),Faculty of Metallurgical and Energy Engineering,Kunming University of Science and Technology,Kunming 650032,China;Songshan Lake Materials Laboratory,Dongguan 523808,China)
基金
supported by the National Key R&D Program of China(2022YFA1403500,2018YFA0703700,2022YFA1405600,and 2021YFA1202900)
the National Natural Science Foundation of China(52025023,12274456,51991342,52021006,92163206,11888101,T2188101,12104018,52250398,52203331,and 91964203)
Guangdong Major Project of Basic and Applied Basic Research(2021B0301030002)
the Strategic Priority Research Program of Chinese Academy of Sciences(XDB33000000)
Beijing Municipal Science and Technology Project(Z221100005822003)。
