摘要
针对现有1 310 nm激光电池(LPC)的低输出电压难以满足电子器件供电需求的问题,采用多结叠层结构设计,制备了六结InGaAsP 1 310 nm LPC并进行了测试。测试结果表明,在功率密度为57.5 W/cm^(2)的激光照射下,六结LPC的光电转换效率为31.0%,开路电压(Voc)超过3.6 V,实现了高的输出电压。六结LPC的短路电流随温度的升高而降低,当激光功率密度为13.25 W/cm^(2)时,Voc的温度系数为-9.61 mV/K。复合电流严重影响LPC的填充因子和光电转换效率,利用双二极管模型拟合了变温I-V曲线,研究了内部参数与温度的变化关系,表明陷阱辅助隧穿过程是导致LPC高复合电流的主要原因。
Aiming at the problem that the low output voltage of the existing 1310 nm laser power converter(LPC)is difficult to meet the power supply requirements of electronic devices,a six-junction InGaAsP 1310 nm LPC was fabricated by using a multi-junction stack structure design and was tested.The test results show that at a laser power density of 57.5 W/cm²,the photoelectric conversion efficiency of the six-junction LPC is 31.0%,and the open circuit voltage(V_(oc))exceeds 3.6 V,achieving high output voltage.The short-circuit current of the six-junction LPC decreases with the increase of temperature.When the laser power density is 13.25 W/cm^(2),the temperature coefficient of V_(oc) is-9.61 mV/K.Recombination current seriously affects the fill factor and photoelectric conversion efficiency of the LPC.The temperature-dependent I-V curves was fitted by using the two-diode model,and the relationship between the internal parameters and temperature was studied,indicating that the trap-assisted tunneling process is the main reason for the high recombination current of the LPC.
作者
秦杰
孙玉润
于淑珍
王安成
尹佳静
董建荣
Qin Jie;Sun Yurun;Yu Shuzhen;Wang Ancheng;Yin Jiajing;Dong Jianrong(School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China;Key Laboratory of Nano Devices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)
出处
《半导体技术》
CAS
北大核心
2023年第8期658-664,共7页
Semiconductor Technology
基金
国家自然科学基金资助项目(62275262)。
