摘要
基于一款带错误检测与纠正(EDAC)功能的65 nm体硅CMOS SRAM,开展了中能质子对纳米级集成电路单粒子效应影响的研究。在SRAM本征工作模式和EDAC模式下,得到了2组试验结果。分析试验数据发现:在重离子与中能质子试验中,采用商用6T设计规则的电路均未发生单粒子闩锁现象,但都发生了单粒子多位翻转现象;质子单粒子效应引起的错误数已饱和,而重离子单粒子效应引起的错误数则随能量不断增加,该现象与2种粒子引起单粒子效应的机理有关。质子与重离子饱和截面的差异是由质子核反应的概率导致的,但空间错误率相近。此次试验很好地探索了中能质子对SRAM电路的影响,明确了质子与重离子导致单粒子错误的异同,为SRAM在航天上的应用奠定了基础。
Based on a 65 nm bulk silicon CMOS SRAM with error detection and correction(EDAC),a research of the effect of intermediate energy proton on single event effect of nanoscale integrated circuits is conducted.Two sets of experimental results are obtained in SRAM intrinsic operation mode and EDAC mode.Analyzing the experimental data,it is found that in both the heavy ion and medium energy proton tests,no single event latch-up occurs with the 6T cell in commercial design rules,but the single-particle multi-bit flip-flop occurs in experiments.The number of errors caused by the proton single event effect is saturated,while the number of errors caused by the heavy ion single event effect is increasing with energy,and this phenomenon is related to the mechanism of the single event effect caused by the two particles.The difference between the saturation cross sections for protons and heavy ions is due to probability of atomic nucleus reaction,but the error rate is similar to each other.This experiment has well explored the effect of intermediate energy protons on SRAM circuits,the similarities and differences between protons and heavy ions leading to single-particle errors are clarified,and the foundation for SRAM applications in space is laid.
作者
陈锡鑫
殷亚楠
高熠
郭刚
陈启明
CHEN Xixin;YING Ya'nan;GAO Yi;GUO Gang;CHEN Qiming(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China;Innovative Center of Radiation Hardening Applied Technology,China Institute of Atomic Energy,Beijing 102413,China)
出处
《电子与封装》
2023年第7期77-80,共4页
Electronics & Packaging
关键词
辐射效应
单粒子效应
中能质子
SRAM
radiation effect
single event effect
intermediate energy proton
SRAM
