摘要
聚酰亚胺(PI)作为高性能聚合物,已成为5G通信的重要原材料之一。传统PI薄膜的介电常数处于3.0~3.4之间,随着电路集成度越来越高,已无法满足高速发展的微电子工业的要求,因此,开发综合性能优异的低介电PI薄膜已成为研究热点。向PI薄膜中引入微/纳米级的分散孔隙,可以有效降低介电常数,同时保留薄膜优异的综合性能。文中从物理和化学制备方法入手,综述了近年来国内外微/纳米多孔低介电PI薄膜(M/N-PLD-PI)的制备工艺,阐明了引入微/纳米级的分散孔隙对降低PI薄膜介电常数的贡献,并对多孔低介电PI薄膜的发展进行了展望。
Polyimide(PI),a high-performance polymer,has become one of the important raw materials for 5G communication.The dielectric constant of traditional PI films is between 3.0 and 3.4.With the development of integrated circuits,PI films can’t meet the demands of microelectronic industry.Therefore,the low dielectric PI films with excellent comprehensive properties have attracted widespread attentions.The introduction of micro/nano scale dispersed pores into PI films can effectively reduce the dielectric constant,and meanwhile retain the excellent comprehensive properties of PI films.The technique of micro/nano porous low-dielectric PI films(M/N-PLD-PI)in recent years,physical and chemical preparation methods,were reviewed in this paper.The contribution of micro/nanoscale dispersed pores to the reduction of the dielectric constant of PI films was clarified,and the development of porous low-dielectric PI films was prospected.
作者
赵宇霄
冯鑫
冯晨曦
王玉辉
程金雪
于晓亮
郭敏杰
Yuxiao Zhao;Xin Feng;Chenxi Feng;Yuhui Wang;Jinxue Cheng;Xiaoliang Yu;Mingjie Guo(College of Chemical Engineering and Materials Science,Tianjin University of Science and Technology,Tianjin 300071,China)
出处
《高分子材料科学与工程》
EI
CAS
CSCD
北大核心
2023年第5期173-181,共9页
Polymer Materials Science & Engineering
基金
中央引导地方科技发展专项(21ZYQCSY00050)
国家自然科学基金资助项目(52173044)。
