摘要
GaN基微型发光二极管(Micro-LED)作为新型显示技术有着广泛的应用前景,在近些年得到了快速的发展。但随着尺寸的降低,Micro-LED的发光效率急剧降低,主要是由于侧壁损伤的影响。本文通过光刻工艺和电感耦合等离子体(ICP)刻蚀制作了5、10、20μm等不同尺寸的Micro-LED结构,分析了刻蚀对Micro-LED带来的台面物理损伤及杂质元素富集的影响,并采用20%浓度四甲基氢氧化铵(TMAH)修复侧壁损伤,采用阴极荧光(CL)分析钝化处理前后Micro-LED的光学特性。结果表明,随着尺寸的降低,侧壁损伤的影响越加严重,采取TMAH钝化工艺能够对侧壁进行有效的修复,提升Micro-LED的发光强度与发光均匀性。
Micro light emitting diode display(Micro-LED)has a wide range of application prospect as a new display technology and has been developed rapidly in recent years.However,as the size decreases,the luminous characteristics efficiency of Micro-LED decreases sharply,which is due to the influence of sidewall damage.In this paper,the Micro-LED mesa structures of different sizes were fabricated by photoetching and inductively coupled plasma(ICP)etching.The surface physical damage and enrichment of impurity elements caused by etching on Micro-LED were analyzed.Tetramethylammonium hydroxide(TMAH)was used to repair the sidewall damage and cathodoluminescence(CL)was used to characterize the optical properties.The results show that with the decrease of the size,the impact of sidewall damage becomes more serious.After passivation with TMAH,the sidewall can be effectively repaired and the luminescence intensity of Micro-LED can be effectively improved.
作者
蔡鑫
徐俞
曹冰
徐科
CAI Xin;XU Yu;CAO Bing;XU Ke(School of Optoelectronic Science and Engineering at Soochow University&Collaborative Innovation Center of Suzhou Nano Science and Technology,Suzhou 215006,China;Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China,Soochow University,Suzhou 215006,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy Sciences,Suzhou 215123,China;Suzhou Nanowin Science and Technology Company,Suzhou 215000,China;Shenyang National Laboratory for Materials Science,Shenyang 110010,China)
出处
《人工晶体学报》
CAS
北大核心
2023年第5期812-817,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金重点项目(61734008)
江苏省重点研发计划(BE2021008-3)。
