摘要
传统的带隙基准源利用运算放大器的负反馈功能实现与温度无关的基准电压,研究运放的3个方面来改进带隙基准源的性能:运放差分输入对管的选择依据、运放主要性能对基准的影响、利用一级运放来提高基准的电源抑制比;提出了2种CMOS带隙电压基准源,整个电路基于CSMC 0.18μm CMOS工艺实现,并利用Cadence Spectre进行仿真,结果表明:在-40℃~125℃温度范围内,2种电路的温度系数均低于1.0×10^(-5)/℃,且电源抑制比都能达到-75 dB。
The negative feedback function of the operational amplifier was used by the traditional bandgap reference to achieve temperature-independent reference voltage.Three aspects of the operational amplifier were studied to improve the performance of the bandgap reference,namely,the slection basis of the differential input of the operational amplifier to the tube,the influence of the main performance of the operational amplifier on the benchmark,and the first level of operational amplifier was used to improve the power supply rejection ratio of the benchmark;Two CMOS bandgap voltage reference sources were proposed,and the whole circuit was realized based on CSMC 0.18μm CMOS process,and simulated by using Cadence Spectre.The results show that the temperature coefficients of the two circuits are all below 1.0×10^(-5)/℃at-40℃to 125℃,and the power supply rejection ratio can reach-75 dB.
作者
黄苏平
范雪
贺琪峰
HUANG Suping;FAN Xue;HE Qifeng(School of Electronic Engineering,Chengdu Technological University,Chengdu 611730,China)
出处
《成都工业学院学报》
2023年第3期52-57,共6页
Journal of Chengdu Technological University
基金
四川省大学生创新创业训练计划(S202111116052)
成都工业学院项目(2020DZ006)。
关键词
带隙基准
运算放大器
电源抑制比
温度系数
bandgap reference
operational amplifier
supply rejection ratio
temperature coefficient
