摘要
All-inorganic cesium lead bromide(CsPbBr_(3))perovskite solar cells have been attracting growing interest due to superior performance stability and low cost.However,low light absorbance and large charge recombination at TiO_(2)/CsPbBr_(3)interface or within CsPbBr_(3)film still prevent further performance improvement.Herein,we report devices with high power conversion efficiency(9.16%)by introducing graphene oxide quantum dots(GOQDs)between TiO_(2)and perovskite layers.The recombination of interfacial radiation can be effectively restrained due to enhanced charge transfer capability.GOQDs with C-rich active sites can involve in crystallization and fill within the CsPbBr_(3)perovskite film as functional semiconductor additives.This work provides a promising strategy to optimize the crystallization process and boost charge extraction at the surface/interface optoelectronic properties of perovskites for high efficient and low-cost solar cells.
基金
supported by the National Natural Science Foundation of China(Grant Nos.21776147,21905153,61604086)
the Qingdao Municipal Science and Technology Bureau(Grant No.19-6-1-91-nsh)
A Project of Shandong Province Higher Educational Science and Technology Program(Grant No.J17KA013).
