摘要
为解决隔离变压器驱动存在副边SiC/GaN MOSFET导通期间电压不稳定和负压关断尖峰的问题,提出了一种磁隔离的SiC/GaN MOSFET脉冲式驱动集成电路。该集成电路为脉冲式驱动。当隔离变压器的原边绕组接收到一个正电压脉冲,经过SiC/GaN MOSFET的结电容保持,从而产生一个平台,维持SiC/GaN MOSFET的开通;当隔离变压器的原边绕组接收到一个负电压脉冲,结电容进行放电,使得SiC/GaN MOSFET关断。该方案可以解决现有的副边SiC/GaN MOSFET导通保持电压不稳定和负压关断尖峰的问题,实现隔离变压器副边SiC/GaN MOSFET导通保持电压稳定和钳位关断负压保持稳定。实验和仿真结果表明该新型集成电路的正确性和可靠性。
In order to solve the problems of the unstable voltage and the negative pressure turn-off peak when the secondary side SiC/GaN MOSFET is conductive,a magnetically isolated SiC/GaN MOSFET pulse-driven integrated circuit was proposed.The drive mode was pulse driven.A positive voltage pulse was received through the primary side winding of the isolating transformer,which was maintained by the junction capacitance of SiC/GaN MOSFET to generate a platform.To maintain the SiC/GaN MOSFET on,when the primary side winding of the isolation transformer received a negative voltage pulse,the junction capacitor was discharged,turning the SiC/GaN MOSFET off.This scheme can solve the problems of the existing secondary SiC/GaN MOSFET on-keeping voltage instability and negative pressure turn-off peak,and realize the effect of isolating the transformer secondary SiC/GaN MOSFET on-keeping voltage stability,and can maintain stable clamp turn-off negative pressure.The experiment and simulation results show that the new integrated circuit is correct and reliable.
作者
王少杰
彭建伟
王涛
WANG Shaojie;PENG Jianwei;WANG Tao(School of Mechanical and Energy Engineering,Shaoyang University,Shaoyang 422000,China)
出处
《邵阳学院学报（自然科学版）》
2023年第2期45-51,共7页
Journal of Shaoyang University：Natural Science Edition
基金
邵阳学院研究生创新项目(CX2021SY036)。
