摘要
结温升高是影响主控振荡放大(MOPA)半导体激光芯片输出功率的重要因素,为解决MOPA芯片的多电极封装和高效散热问题,提出了一种正装和热扩散辅助次热沉相结合的封装结构。建立了该封装结构的3D热模型,对比研究了倒装封装结构、正装无辅助次热沉结构与正装有辅助次热沉结构对MOPA半导体激光器结温的影响。计算结果表明,采用正装有辅助次热沉结构与倒装封装结构散热性能接近,且显著优于正装无辅助次热沉结构,结温降低幅度最高可达40%。另外,采用正装有辅助次热沉封装结构的MOPA半导体激光芯片在连续工作条件下输出功率为10.5 W,谱宽可实现半高全宽小于0.1 nm,中心波长随电流的变化约14 pm/A,实现了10 W级MOPA芯片的封装,验证了该封装结构的有效性。
The increase in junction temperature is an important factor affecting the output power of masteroscillator power amplifier(MOPA)diode laser chip.To achieve the packaging and efficient heat dissipation of themulti-electrode MOPA semiconductor laser chip,a packaging structure that combining P-side up with heat spreaderwas proposed.An analytical three-dimensional thermal model was employed to study the influence on junctiontemperature between the P-side down,P-side up without heat spreader and P-side up with heat spreader.According tothe three-dimensional thermal model,the conduction-cooled capability between P-side up with heat spreader and P-side down is uniform in this paper.Moreover,the packaging can lead to a maximal 40%decrease on junctiontemperature.By the way,the P-side up with heat spreader structure was used in MOPA diode laser chip in experimentthen 10.5 W output power and the spectrum width(FWHM)<0.1 nm of the MOPA chip were obtained in CW mode.
作者
谢鹏飞
雷军
张永刚
王丞乾
吕文强
王昭
杜维川
高松信
Xie Pengfei;Lei Jun;Zhang Yonggang;Wang Chengqian;LüWenqiang;Wang Zhao;Du Weichuan;Gao Songxin(Key Laboratory of Science and Technology on High Energy Laser,China Academy of Engineering Physics,Mianyang 621900,China;Institute of Applied Electronics,CAEP,Mianyang 621900,China)
出处
《强激光与粒子束》
CAS
CSCD
北大核心
2023年第5期1-5,共5页
High Power Laser and Particle Beams
关键词
锥形半导体激光器
热设计
封装结构
热沉
master oscillator power amplifier diode laser
thermal design
package structure
heat sink
