摘要
为了提高室温下多孔硅对NO_(2)气体的灵敏度,提出采用化学气相输运沉积法在多孔硅表面生长VO_(2)纳米颗粒,形成多孔硅基VO_(2)纳米颗粒复合结构,通过调节VO_(2)的沉积压强来改变VO_(2)纳米颗粒的尺寸,研究其对多孔硅基VO_(2)纳米颗粒复合结构室温气敏性能的影响。利用场发射扫描电子显微镜、X射线衍射仪、能谱仪和透射电子显微镜对复合结构的微观形貌、物相和晶体结构进行表征分析。实验结果表明,在沉积压强为330 Pa下获得的复合结构,对摩尔分数为5×10^(-6)的NO_(2)的室温灵敏度达到最大(13.15),是多孔硅灵敏度的5.95倍,并具有良好的选择性。对NO_(2)展现出优异的气敏性能是由于粒径较小的VO_(2)纳米颗粒表面活性增强,与多孔硅之间形成较宽的耗尽层,从而提高了气敏性能。该研究将有助于提升多孔硅在NO_(2)气敏传感器中的应用。
It is proposed to grow VO_(2) nanoparticles on the surface of porous silicon using a chemical vapor transport deposition method to form a porous siliconbased VO_(2) nanoparticles composite structure for improving the sensitivity of porous silicon to NO_(2) gas at room temperature.The size of VO_(2) nanoparticles is altered by varying the VO_(2) deposition pressure and research is conducted on its effect on the gas sensitivity of the porous siliconbased VO_(2) nanoparticle composite structure at room temperature.The microscopic morphology,phase,and crystal structure of the composite structure are characterized and analyzed using a field emission scanning electron microscope,Xray diffractometer,energy spectrometer,and transmission electron microscope.The experimental results demonstrate that the composite structure obtained at the deposition pressure of 330 Pa has the highest room temperature sensitivity(13.15)to the mole fraction of 5×10^(−6) NO_(2),which is 5.95 times the sensitivity of porous silicon,and has good selectivity.The excellent NO_(2) gas sensitivity is due to the surface activity enhancement of VO_(2) nanoparticles with small particle size and the formation of a wider depletion layer between the smaller VO_(2) nanoparticles and porous silicon,thus improving gas sensitivity.This research will help to improve the application of porous silicon in NO_(2) gas sensor.
作者
梁继然
张颖
吴文豪
娄群
Liang Jiran;Zhang Ying;Wu Wenhao;Lou Qun(School of Microelectronics,Tianjin University,Tianjin 300072,China;Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology,Tianjin 300072,China)
出处
《激光与光电子学进展》
CSCD
北大核心
2022年第21期180-187,共8页
Laser & Optoelectronics Progress
基金
国家自然科学基金(61471264)
天津市科技重大专项与工程(19ZXZNGX00060)。
