摘要
ZnO压敏电阻是由大量ZnO晶粒和晶界组成的多晶半导体器件,其内部ZnO晶粒微观结构的几何形状和拓扑结构以及晶界的性能和电气特性分布对ZnO压敏电阻的宏观电气特性的影响非常明显。因此,基于Voronoi网格建立ZnO压敏电阻的微观结构模型和晶界电路模型,研究微观参数的变化对其宏观电气性能的影响。仿真结果表明:通过减小平均晶粒尺寸、提高表面态密度或者降低施主浓度等措施,能够明显提高ZnO压敏电阻的电压梯度,电压梯度的提高有助于降低其残压比;降低晶粒电阻率,可减小ZnO压敏电阻的残压比,同时对其他电气参数无明显影响。因此,研发高梯度、低残压的ZnO压敏电阻,应采取以减小平均晶粒尺寸、降低晶粒电阻率作为主研究路线,以提高表面态密度、降低施主浓度等作为辅助措施的研发策略。
ZnO varistor is a polycrystalline semiconductor device composed of a large number of ZnO grains and grain boundaries.The geometry and topology of the internal ZnO grain microstructure,as well as the performance and electrical property distributions of grain boundaries have a very significant impact on the macro electrical properties of ZnO varistor.Thus,the microstructure model and grain boundary circuit model of ZnO varistor are established based on Voronoi grid,and the influence of the change of micro parameters on its macro electrical properties is studied.The simulation results show that the voltage gradient of ZnO varistor can be significantly improved by reducing the average grain size,increasing the surface density of state or reducing the donor concentration.The increase of voltage gradient helps to reduce the residual voltage ratio.It is able to reduce the residual voltage ratio of ZnO varistor by reducing the grain resistivity without significant effects on the other electrical properties.According to the conclusions,this paper proposes that the research and development of high gradient and low residual voltage ZnO varistor should reduce the average grain size and the grain resistivity as the main research route,and then take increasing the surface density of state and reducing the donor concentration as auxiliary measures.
作者
程宽
赵洪峰
CHENG Kuan;ZHAO Hongfeng(The Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment,School of Electrical Engineering,Xinjiang University,Urumqi,Xinjiang 830046,China)
出处
《广东电力》
2023年第1期102-113,共12页
Guangdong Electric Power
基金
国家自然科学基金项目(51762038)。
关键词
Voronoi网格
电压梯度
晶粒电阻率
残压比
表面态密度
Voronoi grid
voltage gradient
grain resistivity
residual voltage ratio
surface density of state
