摘要
The internal behaviors of carriers in InGaAsP single-junction solar cell are investigated by using electroluminescence(EL) measurements. Two emission peaks can be observed in current-dependent electroluminescence spectra at low temperatures, and carrier localization exists for both peaks under low excitation. The trends of power index α extracted from excitation-dependent EL spectra at different temperatures imply that there exists a competition between Shockley–Read–Hall recombination and Auger recombination. Auger recombination becomes dominant at high temperatures, which is probably responsible for the lower current density of InGaAsP solar cell. Besides, the anomalous “S-shape” tendency with the temperature of band-edge peak position can be attributed to potential fluctuation and carrier redistribution, demonstrating delocalization, transfer, and redistribution of carriers in the continuum band-edge. Furthermore, the strong reduction of activation energy at high excitations indicates that electrons and holes escaped independently, and the faster-escaping carriers are holes.
作者
李雪飞
杨文献
龙军华
谭明
金山
吴栋颖
吴渊渊
陆书龙
Xue-Fei Li;Wen-Xian Yang;Jun-Hua Long;Ming Tan;Shan Jin;Dong-Ying Wu;Yuan-Yuan Wu;Shu-Long Lu(School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China;Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)
基金
Project supported by the National Key Research and Development Program,China (Grant No.2018YFB2003305)
the National Natural Science Foundation of China (Grant Nos.61774165 and 61827823)
the Key Laboratory Fund in Suzhou Institute of Suzhou Nano-Tech and NanoBionis (SINANO),Chinese Academy of Sciences (Grant No.Y4JAQ21005)。
