摘要
随着传统的硅材料加工技术发展到极限,寻找替代硅的材料已迫在眉睫。碳纳米管因其优良的性能将成为替代硅的理想材料。本文介绍了以碳纳米管为基础的场效应晶体管的工作原理以及独特性能。与传统的金属-氧化物-半导体(MOS)场效应晶体管相比,由于碳纳米管具有单分子、准一维、高电流密度等优良特性,所以碳纳米管晶体管将很容易突破传统硅场效应晶体管的物理极限,并且在继续减小器件尺寸、解决耗能和散热问题方面具有优势。
It is necessary to find another kind of material as the substitute for Si ,because the traditional techniques for the fabrication of Si are going to reach their limitation.At present ,carbon nanotube is considered as the best choice.In this article,the operation principle and the special properties of the carbon nanotube-based FET are given.Compared with the traditional MOSFET,carbon nanotube transistor will easily break the limitation of the traditional Si FET,for it has the characteristics of single molecular,quasi one-dimension and high current density.And it takes the advantages in device size continuous scaling down,low power dissipation and good heating-sinking.
出处
《微纳电子技术》
CAS
2002年第12期1-14,共14页
Micronanoelectronic Technology
基金
国家重点基础研究专项经费资助项目(G2001CB3095)
国家自然科学基金资助课题(69925410)
