摘要
文章介绍了基于GaAs0.15μmpHEMT工艺的0.8~18GHz放大衰减多功能芯片的设计,给出了在片测试结果。该芯片集成了共源共栅行波放大单元、三位数控衰减单元和三位并行驱动单元,在0.8~18GHz的超宽带频率范围内,噪声系数典型值≤4.5 dB,增益≥11 dB,且具有3 dB的正斜率,P-1大于13 dBm,输入输出驻波≤1.8,3 bit数控衰减单元2/4/8 dB,衰减精度≤0.5 dB。其中放大器采用单电源+3.3 V供电,工作电流小于60 mA,TTL驱动电路采用-5 V供电,工作电流小于3 mA。芯片尺寸为:2.6 mm×2.8 mm×0.1 mm。
In this paper,the design of 0.8~18 GHz amplification and attenuation multi-function chip based on GaAs 0.15μm pHEMT process is introduced,and on wafer test results are presented.The chip integrates Cascade traveling wave amplifier,3-bit digital attenuator and the TTL drive circuit.In the 0.8~18 GHz ultra wideband frequency range,the typical values of noise coefficient is less than and equal to 4.5 dB,a gain is more than and equal to 11 dB,and it has 3 dB Positive Slope,the P-1 is more than 13 dBm,the input and output of VSWR are less than and equal to 1.8,the 3-bit digital attenuator 2/4/8 dB,the battenuation accuracy is less than and equal to 0.5dB.The amplifier uses the single+3.3 V power supply,and the working current is less than 60 mA.The TTL drive circuit uses the-5 V power supply,and the working current is less than 3 mA.The chip size is 2.6 mm×2.8 mm×0.1 mm.
作者
刘莹
廖学介
邬海峰
王测天
滑育楠
LIU Ying;LIAO Xuejie;WU Haifeng;WANG Cetian;HUA Yunan(Chengdu Ganide Technology Co.,Ltd.,Chengdu 610220,China)
出处
《现代信息科技》
2023年第2期53-56,共4页
Modern Information Technology
