摘要
针对碳化硅(SiC)MOSFET存在的栅氧可靠性问题,对其展开高温栅偏(HTGB)试验研究。以阈值电压(V_(TH))和体二极管通态压降(V_(SD))作为特征参数,设计搭建应力及测试试验平台,研究SiC MOSFET在高温栅偏应力下的特征参数退化特性,并对短期恢复下特征参数的不稳定现象以及长期恢复对特征参数的影响进行了分析。试验结果表明,SiC MOSFET的VTH和VSD均受负向和正向高温栅偏的影响,并能够产生相反方向的参数漂移。撤去应力后存在恢复现象,使电参数受可恢复部分偏移量的影响具有不稳定性,且经过长期室温储存后仍存在进一步的恢复。
Focusing on the problem of gate oxide reliability of silicon carbide(SiC)MOSFETs,the high-temperature gate bias(HTGB)experiment was conducted on SiC MOSFETs.Taking threshold vol-tage(V_(TH))and body diode on-state voltage drop(V_(SD))as characteristic parameters,a stress and mea-surement platform was designed and built to study the degradation characteristics of the characteristic parameters of SiC MOSFETs under HTGB stress.The instability of characteristic parameters under short-term recovery and the influence of long-term recovery on characteristic parameters were analyzed.The experimental results show that Vand Vof SiC MOSFETs are both affected by positive and negative HTGB,resulting in parameter drift in opposite direction.The recovery phenomenon after stress removal makes the electrical parameters unstable under the influence of recoverable drift,and further recovery still exists after long-term storage at room temperature.
作者
崔江
王景霖
陈一凡
林华
Cui Jiang;Wang Jinglin;Chen Yifan;Lin Hua(College of Automation Engineering,Nanjing University of Aeronautics and Astronautics,Nanjing 211116,China;AVIC Shanghai Aero Measurement and Control Technology Research Institute,Shanghai 201601,China;Aviation Key Laboratory of Science and Technology on Fault Diagnosis and Health Management Technology,Shanghai201601,China)
出处
《半导体技术》
CAS
北大核心
2022年第11期915-920,共6页
Semiconductor Technology
基金
航空科学基金资助项目(201933052001)
中央高校基本科研业务费专项资金资助项目(NS2021021)。
