摘要
围绕Ga_(2)O_(3)薄膜的制备、性能测试和理论建模分析设计了一个综合性教学实验。采用磁控溅射法在蓝宝石衬底上制备了Ga_(2)O_(3)薄膜,研究了退火温度对Ga_(2)O_(3)薄膜晶体结构、表面形貌和光学带隙的影响,同时采用第一性原理建模计算分析了Ga替位O和O空位两种缺陷对Ga_(2)O_(3)能带结构和态密度的影响。结果表明,随着退火温度的提高,Ga_(2)O_(3)薄膜由非晶态转变为β-Ga_(2)O_(3),带隙宽度在2.20~4.80 eV范围内变化。理论计算表明,在低温下退火以O空位缺陷占主导地位,而高温退火时Ga替位O缺陷占主导地位。该实验将实验操作与理论建模分析相结合,激发了学生对科学研究的兴趣,提高了学生自主创新意识和实践能力。
A comprehensive teaching experiment was designed based on the preparation,performance test and theoretical modeling analysis of Ga_(2)O_(3) thin films.The Ga_(2)O_(3) thin films were deposited on sapphire substrates by sputtering method.The effect of annealing temperature on the crystal structure,surface morphology and optical bandgap of Ga_(2)O_(3) thin films were investigated.The effect of Ga instead of O position and O vacancy on the band structure and density of state of Ga_(2)O_(3) were also calculated by first principle method.The results shown that with annealing temperature increasing,the structure of Ga_(2)O_(3) thin films changes from amorphous to β-Ga_(2)O_(3) and the bandgap changes in the range of 2.20 and 4.80 eV。Theoretical calculation showed that O vacancy is dominant in low annealing temperature Ga_(2)O_(3) thin films and O defect is dominant in high temperature annealing samples.The experiment combines experimental operation with theoretical modeling analysis,which stimulates students'interest in scientific research and improve students'consciousness of independent innovation and practical ability.
作者
咸冯林
陈柯宇
赵立龙
裴世鑫
XIAN Fenglin;CHEN Keyu;ZHAO Lilong;PEI Shixin(School of Physics and Optoelectronic Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China)
出处
《实验技术与管理》
CAS
北大核心
2022年第11期156-160,185,共6页
Experimental Technology and Management
基金
国家自然科学基金面上项目(62075097)
教育部高等学校大学物理课程教学指导委员会2019年高等学校教学研究项目(DJZW201922hd)
国家级大学生创新创业训练计划支持项目(202210300054Z)。
