摘要
基于h-BN钝化的氢终端金刚石表面导电沟道表现出高的空穴迁移率,但是当前h-BN钝化金刚石主要采用机械剥离的方法,无法实现大尺寸导电沟道,难以满足实际的应用要求.本文系统地开展了经典转移hBN对氢终端金刚石表面导电沟道的载流子输运影响研究.通过微波化学气相沉积外延生长高质量单晶金刚石,并通过表面氢化处理得到氢终端金刚石.通过湿法转移不同层数h-BN制备出h-BN/H-diamond异质结,系统地研究了沟道载流子输运特征.研究结果表明, h-BN转移后沟道导电性能明显增强,且随着h-BN厚度的增加,沟道导电性增强效果趋于稳定.多层h-BN的转移可使氢终端金刚石表面载流子密度提升近2倍,方阻降低到之前的50%.当前的结果显示h-BN/H-diamond异质结可能存在转移掺杂效果,使得载流子密度显著提升.伴随载流子密度的增加, h-BN钝化的金刚石表面沟道迁移率保持稳定, h-BN在金刚石表面吸附,使得原本在氢终端表面的负电荷向h-BN表面移动,作用距离加大,减弱了氢终端金刚石导电沟道中空穴和介质层负电荷的耦合作用,使其迁移率保持稳定.
Conductive channel on the surface of hydrogen terminated diamond with two-dimensional h-BN passivation exhibits high hole mobility. However, the current h-BN passivated diamond mainly uses the method of mechanical peeling, which cannot achieve a large-size conductive channel and is difficult to meet the actual application requirements. In this study, the effect of classical transfer h-BN on the conductive channel on the surface of hydrogen terminated diamond is studied. High-quality single crystal diamond is epitaxially grown by microwave chemical vapor deposition(MPCVD) and the hydrogen terminated diamond is obtained by surface hydrogenation treatment. H-BN/H-diamond heterojunctions with different layers of h-BN are prepared by wetting transfer, and the characteristics of channel carrier transport are systematically studied. The results show that the channel conductivity is significantly enhanced after h-BN transfer, and with the increase of h-BN thickness, the enhancement effect of channel conductivity tends to be stable. The transfer of multilayer h-BN can increase the carrier density on the surface of hydrogen terminated diamond by nearly 2 times, and the square resistance is reduced to 50%. The current results show that the h-BN/H-diamond heterojunction may have a transfer doping effect, resulting in a significant increase in carrier density. With the increase of the channel carrier density, the channel mobility on the surface of the h-BN passivated diamond remains stable.The H-BN absorbs on the surface of the diamond, so that the negative charge originally on the surface of the hydrogen termination moves to the surface of h-BN, and the distance of action increases, weakening the coupling of the negative charge of the hole with the negative charge of the dielectric layer in the conductive channel of the hydrogen terminated diamond, which makes the mobility stable.
作者
贾燕伟
何健
何萌
朱肖华
赵上熳
刘金龙
陈良贤
魏俊俊
李成明
Jia Yan-Wei;He Jian;He Meng;Zhu Xiao-Hua;Zhao Shang-Man;Liu Jin-Long;Chen Liang-Xian;Wei Jun-Jun;Li Cheng-Ming(Institute for Advanced Materials and Technology,University of Science and Technology Beijing,Beijing 100083,China;Graduate School University of Science and Technology Beijing,Foshan 528300,China)
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2022年第22期319-326,共8页
Acta Physica Sinica
基金
国家磁约束核聚变发展研究专项资助(批准号:2019YFE03100200)
北京自然科学基金(批准号:4192038)
核探测与核电子学国家重点实验室项目(SKLPDE-KF-202202)。
关键词
氢终端金刚石
异质结
六方氮化硼
湿法转移
hydrogen terminated diamond
heterostructure
h-BN
wetting transfer
