摘要
Because of the wide selectivity of ferromagnetic and ferroelectric(FE)components,electric-field(E-field)control of magnetism via strain mediation can be easily realized through composite multiferroic heterostructures.Here,an MgO-based magnetic tunnel junction(MTJ)is chosen rationally as the ferromagnetic constitution and a high-activity(001)-Pb(Mg_(1/3)Nb_(2/3))_(0.7)Ti_(0.3)O_(3)(PMN-0.3PT)single crystal is selected as the FE component to create a multiferroic MTJ/FE hybrid structure.The shape of tunneling magnetoresistance(TMR)versus in situ E-fields imprints the butterfly loop of the piezo-strain of the FE without magnetic-field bias.The E-field-controlled change in the TMR ratio is up to-0.27%without magnetic-field bias.Moreover,when a typical magnetic field(~±10 Oe)is applied along the minor axis of the MTJ,the butterfly loop is changed significantly by the E-fields relative to that without magnetic-field bias.This suggests that the E-field-controlled junction resistance is spin-dependent and correlated with magnetization switching in the free layer of the MTJ.In addition,based on such a multiferroic heterostructure,a strain-gauge factor up to approximately 40 is achieved,which decreases further with a sign change from positive to negative with increasing magnetic fields.This multiferroic hybrid structure is a promising avenue to control TMR through E-fields in low-power-consumption spintronic and straintronic devices at room temperature.
作者
Wenyu Huang
Cangmin Wang
Yichao Liu
Shaoting Wang
Weifeng Ge
Huaili Qiu
Yuanjun Yang
Ting Zhang
Hui Zhang
Chen Gao
黄文宇;王藏敏;刘艺超;王绍庭;葛威锋;仇怀利;杨远俊;张霆;张汇;高琛(School of Physics,Hefei University of Technology,Hefei 230009,China;School of Microelectronics,Hefei University of Technology,Hefei 230009,China;Hefei National Laboratory for Physical Sciences at Microscale(HFNL),University of Science and Technology of China,Hefei 230026,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China)
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.52072102 and 11775224)
It was also partially funded through the Open Foundation of the Hefei National Laboratory for Physical Sciences at the Microscale(Grant No.KF2020002).
