摘要
为了解决SiC MOSFET并联产生的不均流问题,降低并联器件的温度差异性对均流的影响,通过采用均温板的方案,减小了并联器件的温度差异性。当采用0.5 mm的均温板后,通过试验得到的并联器件之间的最大温差仅为1.83 K,验证了该均温方案的有效性。
In order to solve the problem of uneven current caused by the parallel connection of SiC MOSFET and reduce the inf luence of the temperature difference of the parallel devices onto the uneven current,the temperature difference of the parallel devices is reduced by adopting the solution of the temperature equalization plate.After application of 0.5 mm temperature equalization plate,the maximum temperature difference among the parallel devices obtained by the test is only 1.83 K,to verify feasibility of the temperature equalization program.
作者
刘双华
吴慧玲
陈志雪
LIU Shuanghua;WU Huiling;CHEN Zhixue;CRRC Zhuzhou(Electric Co.,Ltd.,412000)
出处
《电机技术》
2022年第3期30-32,共3页
Electrical Machinery Technology
关键词
SiC
MOSFET
并联
均流
均温
SiC MOSFET
parallel
average current
temperature equalization
