摘要
非冷却热探测器的性能在光谱检测应用中仍需要提高。为了降低热噪声和减小暗电流,实现器件的高温工作性能,本文通过将器件的倍增层和吸收层分离设计后,选用InAlAs作为倍增层材料,利用仿真软件Silvaco-TCAD,详细探究了不同温度对器件暗电流和光响应度的影响规律。结果表明,在高温160~300 K范围内,随着温度的升高,器件的暗电流增大,光响应度呈现先增大后减小的变化。利用公式进一步计算出,-500 mV和300 K时,器件的暗电流密度为0.485 A/cm^(2),1.5μm处的峰值响应度为1.818 A/W,零偏置微分电阻面积为0.053Ω·cm^(2),比探测率为3.26×10^(9) cm·Hz·W。
The performance of uncooled heat detectors still needs to be improved in spectral inspection applications.In order to reduce the thermal noise and dark current and realize the high temperature performance of the device, the multiplier layer and the absorption layer are designed separately, and InAlAs is used as the multiplication layer material, the effects of different temperature on the dark current and light responsivity of the device are investigated in detail by using the simulation software Silvaco-TCAD.The results show that in the range of high temperature 160~300 K,the dark current of the device increases with the increase of temperature, and the light responsivity shows a change of increasing and then decreasing.Using the equation, it is further calculated that the device has a dark current density of 0.485 A/cm^(2) at-500 mV and 300 K,a peak responsivity of 1.818 A/W at 1.5 μm, a zero-bias differential resistance area of 0.053 Ω·cm^(2),and a specific detectivity of 3.26×10^(9) cm·Hz·W.
作者
杜鹏飞
叶伟
DU Peng-fei;YE Wei(School of Mechanical Engineering,Shaanxi University of Technology,Hanzhong 723001,China)
出处
《激光与红外》
CAS
CSCD
北大核心
2022年第9期1378-1383,共6页
Laser & Infrared
基金
陕西省教育厅专项科学研究计划项目(No.17JK0144,No.18JK0151)
陕西理工大学人才启动项目(No.SLGQD2017-19)资助。
关键词
红外探测
高温工
暗电
光响应
比探测率
infrared detector
high operating temperature
dark current
responsivity spectrum
specific detectivity
