摘要
采用气体源分子束外延(GSMBE)技术,研究了InP衬底上InAlAs线性渐变缓冲层对InGaAs/InAlAs高迁移率晶体管(HEMT)材料特性影响。研究了不同厚度和不同铟含量的InAlAs线性渐变缓冲层对材料的表面质量、电子迁移率和二维电子气浓度的影响。结果表明,在300 K(77 K)时,电子迁移率和电子浓度分别为8570 cm^(2)/(Vs)^(-1)(23200 cm^(2)/(Vs)^(-1))3.255E12 cm^(-2)(2.732E12 cm^(-2))。当InAlAs线性渐变缓冲层厚度为50 nm时,材料的表面形貌得到了很好的改善,均方根粗糙度(RMS)为0.154 nm。本研究可以为HEMT器件性能的提高提供强有力的支持。
This paper reports the material characteristics of InGaAs/InAlAs high electron mobility transistor(HEMT).The linearly graded InAlAs buffer layer was grown on InP substrates by gas source molecular beam epitaxy(GSMBE).The influence of InAlAs graded buffer layer with different thickness and different indium contents on the surface quality,the electron mobility and the concentrations of two-dimensional electron gas(2DEG)was studied.It was found that the electron mobility and concentration at 300 K(77 K)were 8570 cm^(2)/(Vs)^(-1)(23200 cm^(2)/(Vs)^(-1))and 3.255×10^(12)cm^(-2)(2.732×10^(12)cm^(-2)).The surface morphology of the material was also well improved and the root mean square(RMS)was 0.154 nm when the InAlAs graded buffer layer thickness was 50 nm.And this study can provide strong support for the improvement of HEMT performance.
作者
田方坤
艾立鹍
孙国玉
徐安怀
黄华
龚谦
齐鸣
TIAN Fang-Kun;AI Li-Kun;SUN Guo-Yu;XU An-Huai;HUANG Hua;GONG Qian;QI Ming(Key Laboratory of Terahertz Solid State Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;College of Physics and Electronic Engineering,Hainan Normal University,Haikou 571158,China)
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2022年第4期726-732,共7页
Journal of Infrared and Millimeter Waves
基金
Supported by National Natural Science Foundation of China(61434006)。
