摘要
In the post-Moore era, memory devices with smaller sizes, lower energy consumption, and higher reliability are desired. As a classic type of non-volatile memory, magnetic random-access memory(MRAM)is outstanding, since it keeps data storage by magnetic states(electron spin) instead of electron charges.
作者
Yeliang Wang
王业亮(School of Integrated Circuits and Electronics,MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices,Beijing Institute of Technology,Beijing 100081,China)
