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Monolayer tungsten disulfide in photonic environment:Angleresolved weak and strong light-matter coupling 被引量:1

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摘要 Light-matter interactions in two-dimensional transition metal dichalcogenides(TMDs)are sensitive to the surrounding dielectric environment.Depending on the interacting strength,weak and strong exciton–photon coupling effects can occur when the exciton energy is resonant with the one of photon.Here we report angle-resolved spectroscopic signatures of monolayer tungsten disulfide(1L-WS2)in weak and strong exciton–photon coupling environments.Inherent optical response of 1L-WS_(2)in the momentum space is uncovered by employing a dielectric mirror as substrate,where the energy dispersion is angleindependent while the amplitudes increase at high detection angles.When 1L-WS_(2)sits on top of a dielectric layer on silicon,the resonant trapped photon weakly couples with the exciton,in which the minimum of reflection dip shifts at both sides of the crossing angle while the emitted exciton energy remains unchanged.The unusual shift of reflection dip is attributed to the presence of Fano resonance under white-light illumination.By embedding 1L-WS_(2)into a dielectric microcavity,strong exciton–photon coupling results in the formation of lower and upper polariton branches with an appreciable Rabi splitting of 34 meV at room temperature,where the observed blueshift of the lower polariton branch is indicative of the enhanced polaritonpolariton scattering.Our findings highlight the effect of dielectric environment on angle-resolved optical response of exciton–photon interactions in a two-dimensional semiconductor,which is helpful to develop practical TMD-based architectures for photonic and polaritonic applications.
出处 《Nano Research》 SCIE EI CSCD 2022年第6期5619-5625,共7页 纳米研究(英文版)
基金 support of the Fundamental Research Funds for the Central Universities of China,the National Natural Science Foundation of China(No.61904151) the Natural Science Foundation of Shaanxi(No.2020JM-108) the Joint Research Funds of the Department of Science&Technology of Shaanxi Province and Northwestern Polytechnical University(No.2020GXLH-Z-020) T.Y thanks the support of the Singapore National Research Foundation(NRF)under the Competitive Research Programs(No.NRF-CRP-21-2018-0007) X.W.Z.thanks the support of National Natural Science Foundation of China(No.12174422).
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  • 1Ayari, A.; Cobas, E.; Ogundadegbe, O.; Fuhrer, M. S. Realization and electrical characterization of ultrathin crystals of layered transition-metal dichaleogenides. J. Appl. Phys. 2007, 101, 014507. 被引量:1
  • 2Bao, W. Z.; Cai, X. H.; Kim, D.; Sridhara, K.; Fuhrer, M. S. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects. Appl. Phys. Lett. 2013, 102, 042104. 被引量:1
  • 3Buseema, M.; Barkelid, M.; Zwiller, V.; van der Zant, H. S. J.; Steele, G. A.; Castellanos-Gomez, A. Large and tunable photothermoelectric effect in single-layer MoS2. Nano Lett. 2013, 13, 358-363. 被引量:1
  • 4Castellanos-Gomez, A.; Poot, M.; Steele, G. A.; van der Zant, H. S. J.; Agra't, N.; Rubio-Bollinger, G. Elastic properties of freely suspended MoSz nanosheets. Adv. Mater. 2012, 24, 772-775. 被引量:1
  • 5Cooper, R. C.; Lee, C.; Marianetti, C. A.; Wei, X. D.; Hone, J.; Kysar, J. W. Nonlinear elastic behavior of two-dimensional molybdenum disulfide. Phys. Rev. B 2013, 87, 035423. 被引量:1
  • 6Castellanos-Gomez, A.; van Leeuwen, R.; Buscema, M.; van der Zant, H. S.; Steele, G. A.; Venstra, W. J. Single-layer MoS2 mechanical resonators. Adv. Mater. 2013, 25, 6719- 6723. 被引量:1
  • 7Splendiani, A.; Sun, L.; Zbang, Y. B.; Li, T. S.; Kim, J.; Chim, C. Y.; Galli, G.; Wang, F. Emerging photoluminescence in monolayer MoS2. Nano Lett. 2010, 10, 1271-1275. 被引量:1
  • 8Mak, K. F.; Lee, C.; Hone, J.; Shah, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805. 被引量:1
  • 9Yin, Z. Y.; Li, H.; Li, H.; Jiang, L.; Shi, Y. M.; Sun, Y. H.; Lu, G.; Zhang, Q.; Chen, X. D.; Zhang, H. Single-layer MoS2 phototransistors. ACS Nano 2012, 6, 74-80. 被引量:1
  • 10Lee, 14. S.; Min, S. W.; Chang, Y. G.; Park, M. K.; Nam, T.; Kim, H.; Kim, J. H.; Ryu, S.; Ira, S. MoS2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett. 2012, 12, 3695-3700. 被引量:1

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