摘要
阐述在14nm FinFET及以下工艺,由于器件需要,较多制程刻蚀后关键尺寸为22nm。DUV光刻工艺关键尺寸的极限38nm左右。探讨在形成最终的关键尺寸过程中,刻蚀工艺起到至关重要的作用。通过刻蚀工艺的细致研究,不仅可以根据需求得到不同的刻蚀偏差,同时能够对关键尺寸均匀性(CD Uniformity)进行优化,从而达到芯片制造的需求。
This paper describes that the critical dimension after etching is possibly 22nm in 14nm FinFET and beyond,due to the requests of devices.The limit of the critical dimension of DUV lithography process is about 38nm.It discusses that the etching process plays an important role during the process of forming the final critical dimensions.Through the detailed study of the etching process,we can not only get different etching bias,but also optimize the CD uniformity,so as to meet the requirements of chip manufacturing.
作者
周利民
刘少雄
ZHOU Limin;LIU Shaoxiong(Shanghai Huali Integrated Circuit Manufacturing Co.,Ltd.,Shanghai 201203,China)
出处
《集成电路应用》
2022年第5期14-16,共3页
Application of IC
基金
上海市经济和信息化委员会软件和集成电路产业发展专项基金(1500204)。
关键词
集成电路制造
关键尺寸
刻蚀
偏差
均匀性
integrated circuit manufacturing
critical dimensions
etching
bias
uniformity
