摘要
柔性Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)薄膜太阳电池因具有轻便、灵活、可弯折等优点,可广泛应用于柔性电子器件和便捷式可穿戴设备。但柔性CZTSSe薄膜中的应力问题严重限制了其效率的提升。采用磁控溅射法在柔性Ti衬底和Mo背电极层之间溅射Al_(2)O_(3)扩散阻挡层来减小柔性CZTSSe薄膜中的残余应力。系统研究了Al_(2)O_(3)扩散阻挡层厚度对CZTSSe薄膜物相结构、微观形貌、残余应力以及器件性能的影响。结果表明,Al_(2)O_(3)扩散阻挡层的引入可有效提高CZTSSe薄膜的结晶质量,减小残余应力,降低缺陷密度,从而抑制载流子的复合。当Al_(2)O_(3)扩散阻挡层厚度为40 nm时,CZTSSe薄膜表现出最佳的结构、形貌和光电特性,相比没有引入Al_(2)O_(3)扩散阻挡层,CZTSSe薄膜的残余应力由-3.99 GPa减小至-2.06 GPa,其太阳电池光电转换效率由2.61%提升至4.21%。
Due to the advantages of lightness,flexibility and bendability,flexible Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)thin film solar cells can be widely used in flexible electronic devices and portable wearable devices.However,the stress issue in flexible CZTSSe thin films seriously restricts its efficiency enhancement.By using the magnetron sputtering method,Al_(2)O_(3)diffusion barrier layer was sputtered between the flexible Ti substrate and back contact Mo layer to decrease the residual stress of the flexible CZTSSe thin film.The effects of the thickness of the Al_(2)O_(3)diffusion barrier layer on phase structure,micromorphology,residual stress and device performance of the CZTSSe thin film were systematically investigated.The results show that the introduction of the Al_(2)O_(3)diffusion barrier layer can effectively improve the crystalline quality,decrease residual stress and reduce defect density of the CZTSSe thin film,thereby suppress carrier recombination.When the thickness of the Al_(2)O_(3)diffusion barrier layer is 40 nm,the CZTSSe thin film presents the best structure,morphology and photoelectric characteristics.Compared with the CZTSSe thin film without the Al_(2)O_(3)diffusion barrier layer,the residual stress of the CZTSSe thin film with 40 nm-thick Al_(2)O_(3)diffusion barrier layer decreases from-3.99 GPa to-2.06 GPa,and the photoelectric conversion efficiency of its solar cell increases from 2.61%to 4.21%.
作者
陈文静
孙孪鸿
王威
赵毅杰
袁文栋
沈哲苇
毛梦洁
Chen Wenjing;Sun Luanhong;Wang Wei;Zhao Yijie;Yuan Wendong;Shen Zhewei;Mao Mengjie(School of Materials Engineering,Jinling Institute of Technology,Nanjing 211169,China)
出处
《半导体技术》
CAS
北大核心
2022年第6期437-442,447,共7页
Semiconductor Technology
基金
国家自然科学基金资助项目(61804069,51904128)
江苏省高等学校自然科学研究面上项目(21KJB430020)
江苏省大学生创新训练项目(202113573018Z)
金陵科技学院高层次人才科研启动项目(jit-b-202121)。
