摘要
人们在生活中经常会产生漏报等错误记忆,区分出产生正确记忆与错误记忆的大脑运行认知机制,对提高人类正确记忆发生率、抑制错误记忆产生以及改善患者记忆障碍问题等具有重要的意义。基于脑电信号探索正确记忆与错误记忆的差异性,能更全面地理清人脑活动过程中正确记忆与错误记忆加工机制的异同。设计了基于Deese-Roediger-MC-Dermote(DRM)范式的改进的脑电实验,采集被试的脑电数据,探究正确记忆与错误记忆的差异性。采用时频域分析的方法分别对δ、θ、α、β、γ波进行了差异分析,对具有显著差异的频段采用皮尔逊相关方法分别构建脑功能网络,并对脑网络特征属性进行了对比分析。结果表明:大脑前顶区错误记忆θ、α_(2)波能量谱密度显著大于正确记忆(P<0.05)。对脑网络的分析结果显示,大脑前后额区、后顶区θ、α_(2)波脑功能网络连接正确记忆显著多于错误记忆;正确记忆θ、α_(2)波节点度均显著高于错误记忆,α_(2)波聚类系数正确记忆显著高于错误记忆;正确记忆与错误记忆θ、α_(2)波介数中心度均无显著差别。正确记忆任务θ、α_(2)波大脑功能连接通路较错误记忆任务更多。正确记忆平均反应时长是961.56 ms;错误记忆平均反应时长是1097.99 ms。与正确记忆相比,错误记忆反应时长明显长于正确记忆。大脑前顶区正确记忆与错误记忆脑波活动能量差异表现最明显,差异波中错误记忆大脑活跃度均显著高于正确记忆;大脑后额区θ、α_(2)波脑网络连接程度及节点度差异最明显,正确记忆均显著大于错误记忆,可能同存在后额-前顶记忆机制,使得正确记忆与错误记忆存在明显差异。
People often produce false memories such as missing reports in life.It is of great significance to distinguish the cognitive mechanism of brain operation that produces correct memory and false memory for improving the incidence of correct memory,inhibiting the generation of false memory and improving the memory disorders of patients.By exploring the difference between correct memory and false memory based on electroencephalogram(EEG)signals,the similarities and differences between correct memory and false memory processing mechanisms in human brain activities can be more comprehensively clarified.An improved EEG experiment based on Deese-Roediger-MC-Dermote(DRM)paradigm was designed.The difference between correct memory and false memory was explored by collecting the EEG data of the experimenter.The differences ofδ,θ,α,βandγwaves were analyzed by time-frequency domain analysis method.And the brain functional networks were constructed by Pearson correlation method for the frequency bands with significant differences.And the characteristic attributes of brain networks were compared and analyzed.The results show that the energy spectral density ofθandα_(2) waves in the anterior parietal region of the brain is significantly higher than that in the correct memory(P<0.05).The results show that the correct memory is significantly more than the false memory in the connection of brain functional network ofθandα_(2) waves in the anterior and posterior frontal regions,posterior parietal regions.The node degrees of bothθandα_(2) waves in correct memory are significantly higher than those in false memory,and the cluster coefficients ofα_(2) waves in correct memory are significantly higher than those in false memory.There is no significant difference in the centrality ofθandα_(2) wave mediators between correct and false memory.The brain functional connectivity pathways ofθandα_(2) waves in the correct memory task are more than those in the false memory task.The average response time of correct memory is 961.56
作者
张峻瑜
李颖
张志谋
杨硕
尹宁
ZHANG Jun-yu;LI Ying;ZHANG Zhi-mou;YANG Shuo;YIN Ning(State Key Laboratory of Reliability and Intelligence of Electrical Equipment, School of Electrical Engineering, Hebei University of Technology, Tianjin 300130, China;Tianjin Key Laboratory of Bioelectromagnetic Technology and Intelligent Health, School of Electrical Engineering, Hebei University of Technology, Tianjin 300130, China)
出处
《科学技术与工程》
北大核心
2022年第16期6430-6441,共12页
Science Technology and Engineering
基金
国家自然科学基金(51707055,51877067)。
关键词
正确记忆
错误记忆
工作记忆
时频分析
脑功能网络
correct memory
false memory
working memory
time-frequency analysis
brain functional network
