摘要
在高频、大功率、高温、高压等领域,氮化镓高电子迁移率晶体管(HEMT)器件因其优异的耐辐射性能而被广泛地应用于卫星、太空探测、核反应堆等领域。尽管从理论和一些试验研究中可以得知,氮化镓材料具有良好的耐辐射特性,但在实际应用中,因其制作工艺及结构等因素的影响,氮化镓HEMT器件的耐辐射特性受到了很大的影响和挑战。本文介绍了氮化镓HEMT器件几种辐射效应,并对氮化镓HEMT器件辐射的研究进行了综述。
GaN High Electron Mobility Transistor(HEMT)devices have superior advantages in highfrequency,high-power,high-temperature and high-pressure applications,and due to the excellent radiation resistance characteristics of gallium nitride materials,the devices are useful in radiation environments such as satellites,space exploration,and nuclear reactors.Although the theory and some existing experimental results have shown that GaN materials have excellent radiation resistance properties,in actual situations,the radiation resistance properties of GaN HEMT devices are greatly affected and challenged due to the influence of the device manufacturing process and structure.The major radiation effects of GaN HEMT devices are discussed,and the radiation research of GaN HEMT devices is reviewed.
作者
吕航航
曹艳荣
马毛旦
张龙涛
任晨
王志恒
吕玲
郑雪峰
马晓华
LYU Hanghang;CAO Yanrong;MA Maodan;ZHANG Longtao;REN Chen;WANG Zhiheng;LYU Ling;ZHENG Xuefeng;MA Xiaohua(School of Electro-Mechanical Engineering,Xidian University,Xi'an Shaanxi 710071,China;State Key Subject Laboratory of Wide Band Gap Semiconductor Technology,Xidian University,Xi'an Shaanxi 710071,China)
出处
《太赫兹科学与电子信息学报》
2022年第6期535-542,564,共9页
Journal of Terahertz Science and Electronic Information Technology
基金
北京智芯微电子科技有限公司实验室开放基金项目
国家自然科学基金资助项目(11690042,U1866212,12035019,61727804,11690040)
。
