摘要
近年来,半导体纳米阵列结构材料因能激发光学共振及其优良的光电性能在光电子器件领域被广泛的应用。本文采用纳米压印技术制备具有一定直径和周期的SiO_(2)纳米柱作为掩膜层,采用ICP刻蚀制备了GaAs纳米柱阵列,重点研究了不同刻蚀条件处理工艺对纳米柱阵列形貌的影响,与表面无纳米结构的薄膜材料相比,其反射率得到明显的降低且最低约为3%,因此纳米阵列结构能有效的增强光吸收,具有极其优良的光电性能。
In recent years,semiconductor nanoarray structure materials have been widely used in the field of optoelectronic devices because of their ability to excite optical resonance and their excellent photoelectric properties.In this paper,nanoimprint technology is used to prepare SiO_(2) nanopillars with a certain diameter and period as mask layer,and GaAs nanopillar arrays are prepared by ICP etching.The effect of different etching conditions on the morphology of nanopillar arrays is mainly studied.Compared with the thin film material without nanostructure on the surface,its reflectivity is significantly reduced and the lowest is about 3%.So the nanoarray structure can effectively enhance light absorption and has extremely excellent photoelectric properties.
作者
刘双飞
肖家军
张蓓
彭新村
邹继军
邓文娟
Liu Shuangfei;Xiao Jiajun;Zhang Bei;Peng Xincun;Zou Jijun;Deng Wenjuan(Engineering Research Center of New Energy Technology of Jiangxi Province,East China University of Technology,Nanchang Jiangxi,330013;Engineering Research Center of Nuclear Technology Application(East China University of Technology),Ministry of Education,Nanchang Jiangxi,330013)
出处
《电子测试》
2022年第10期39-41,56,共4页
Electronic Test
基金
国家自然科学基金(62061001,61204071,61961001)
江西省自然科学基金(20202BAB202013)资助项目。
