摘要
在柔性透明电子学领域,非晶氧化物半导体是场效应晶体管的关键材料。采用了一种简单、低成本的方法,即软印刷技术制备高性能的锌锡氧化物Zn-Sn-O(ZTO)底栅型场效应晶体管(FETs)。利用自组装单分子膜(SAM)进行微接触印刷,制备了铟锡氧化物(ITO)源漏电极和ZTO晶体管沟道材料。柔性聚合物印章被用于SAMs的图形转移,然后在氧化物湿蚀刻期间用作化学保护层。光学显微镜和电子显微镜中可以清晰地看见良好的图形转移,其分辨率高,台阶轮廓清晰。电学测量显示制备的底栅型ZTO晶体管有着极低的漏电流(<1 nA/cm^(2))、高平均电子迁移率[2.2 cm^(2)/(V·s)]和优良的通断比(1.7×10^(7))。
Amorphous oxide semiconductors are critical materials for field effect transistors(FETs)in flexible and transparent electronics area. Herein,a facile and cost-effective way to fabricate high-performance bottom-gate FETs with Zn-Sn-O(ZTO)as channel material via soft lithography was reported in this paper. The In-Sn-O(ITO)source/drain electrodes and ZTO channel materials were patterned using micro-contact printing of self-assembled monolayer(SAM). A polymer stamp was used to transfer the SAMs to the oxide surface,and the SAMs were used as a chemical protection layer during wet etching. Optical and electron microscopy of the devices indicated excellent pattern transfer with good resolution and sharp step profiles. Electrical characterizations of the bottom-gate ZTO-FET show a drain-source current on-off ratio of 1.7×10^(7) and an average electron mobility of 2.2 cm^(2)/(V·s),whereas the gate leakage current is below 1 nA/cm^(2).
作者
杜晓松
沈秋华
DU Xiaosong;SHEN Qiuhua(School of Microelectronics and Control Engineering,hangzhou University,Changzhou,Jiangsu,213164,CHN;SJ Semiconductor Corporation,Jiangyin,Jiangsu,214400,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2022年第1期33-37,共5页
Research & Progress of SSE
基金
江苏省“六大人才高峰”计划资助项目(DZXX-097)
江苏省高层次创新创业人才引进计划资助项目(JSSCRC2021534)
常州市领军型创新人才引进培育项目(CZ2021-12)
常州大学引进人才启动经费资助项目(ZMF20020444)。
关键词
非晶氧化物半导体
场效应晶体管
软印刷
微接触印刷
柔性电子
amorphous oxide semiconductor
field-effect transistor(FET)
soft lithography
micro-contact printing
flexible electronics
