摘要
利用半导体标准工艺,在8英寸工艺平台上,通过光刻和剥离工艺制备出不同线条宽度的坡莫合金材料Ta(5 nm)/NiFe(12 nm)/Ta(2 nm),然后再进行表面钝化、电极引出和TO-94封装以后进行测试。测试结果表明:在常温条件下,不同薄膜线宽对材料AMR值影响不大,而对薄膜材料的饱和磁感应强度影响巨大。当线宽从18μm增大到30μm时,薄膜材料的AMR测试曲线在1.2%处的宽度ΔH从6,565.408 A/m减小到2,025.024 A/m。
Using the standard semiconductor,photolithography and stripping processes,grow the permalloy thin film material with Ta(5 nm)/NiFe(12 nm)/Ta(2 nm)structure in different line widths from 18μm to 30μm.Test after surface passivation,electrode extraction and TO-94 packaging.The result shows that different thin film line widths have little impact on the material AMR value under normal temperature conditions,while the saturated magnetic sensing strength of the thin film material is huge.When the line width increases from 18μm to 30μm,the width of AMR test curve at 1.2%(ΔH)decreases from 6565.408 A/m to 2025.024 A/m.
作者
余涛
杨黎
岑杉杉
YU Tao;YANG Li;CEN Shanshan(Guizhou Yaguang Electronics Technology Co.,Ltd.,Guiyang 550025,China)
出处
《传感器世界》
2022年第2期1-5,共5页
Sensor World
关键词
坡莫合金
线条宽度
AMR
饱和磁感应强度
permalloy thin film
line width
AMR
saturated magnetic sensing strength
