摘要
为了解决目前GaAs光导开关成品率低、稳定性差和可靠性低等问题,提出了GaAs光导开关的关键电极制备工艺解决方案。该方案首先以半绝缘GaAs材料作为衬底,利用电子束蒸镀机在GaAs衬底上沉积Ni/Ge/Au/Ni/Au金属复合层作为光导开关电极,并对电极进行快速退火使其与GaAs衬底形成欧姆接触;然后,为了隔绝光导开关与外界环境,在GaAs衬底上沉积氮化硅作为钝化保护层;最后,通过在欧姆接触电极上外延场板的工艺,制备出电极间距为4 mm的异面GaAs光导开关。对所制备的GaAs光导开关的测试结果表明:在400℃退火条件下,电极的接触电阻率最低可达到0.0195Ω·cm^(2);采用50Ω单脉冲形成线,在工作频率为1 kHz、偏置电压为22 kV时,光导开关的输出电压脉冲为10 kV,脉冲上升时间为亚ns量级。采用该制备方法制备的GaAs光导开关的成品率高达约98%,可稳定工作上万次。
A key electrode preparation process solution of GaAs photoconductive semiconductor switch is proposed to solve the current problems of low yield,poor stability and low reliability of GaAs photoconductive semiconductor switches.In this scheme,the semi-insulating GaAs material is firstly used as substrate,and the Ni/Ge/Au/Ni/Au metal composite layer is deposited on GaAs substrate by electron beam evaporation machine as electrode of GaAs photoconductive semiconductor switch,and then the electrode is annealed quickly to form ohmic contact with the GaAs substrate;then,in order to isolate the photoconductive semiconductor switch from the external environment,silicon nitride is deposited on the GaAs substrate as a passivation protective layer;finally,a GaAs photoconductive semiconductor switch with 4 mm gap between two bilateral electrodes is fabricated by epitaxial field plate on ohmic contact electrode.Test results of the GaAs photoconductive semiconductor switch show that the minimum specific contact resistivity of the electrode can reach 0.0195Ω·cm^(2)when annealed at 400℃;When the single pulse forming line of 50Ωis adopted,the operating frequency is 1 kHz and the bias voltage is 22 kV,the output voltage pulse of photoconductive semiconductor switch is 10 kV and the pulse rise time is sub ns.The yield of GaAs photoconductive semiconductor switch prepared by this preparation method is about 98%,and it can work stably for tens of thousands of times.
作者
党鑫
杨向红
孙岳
刘康
朱莉
胡龙
李昕
刘卫华
王小力
DANG Xin;YANG Xianghong;SUN Yue;LIU Kang;ZHU Li;HU Long;LI Xin;LIU Weihua;WANG Xiaoli(Faculty of Electronic and Information Engineering,Xi’an Jiaotong University,Xi’an 710049,China)
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
2022年第2期184-190,共7页
Journal of Xi'an Jiaotong University
基金
国家自然科学基金资助项目(51707162)
强脉冲辐射环境模拟与效应国家重点实验室基金资助项目(SKLIPR 2004)。
关键词
GAAS光导开关
电极制备
欧姆接触
性能测试
可靠性
GaAs photoconductive semiconductor switch
electrode preparation
ohmic contact
performance test
reliability
